PNP TRANSISTOR. 2N3634 Datasheet

2N3634 TRANSISTOR. Datasheet pdf. Equivalent


TT 2N3634
SILICON PNP TRANSISTOR
2N3634
General Purpose PNP Silicon Transistor
High Voltage, High Speed Saturated Switching
Low Power Amplifier Applications
Hermetic TO39 Package
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated)
VCBO Collector – Base Voltage
-140V
VCEO Collector – Emitter Voltage
-140V
VEBO Emitter – Base Voltage
-5.0V
IC Continuous Collector Current
-1.0A
PD
Total Power Dissipation at
TA = 25°C
1.0W
Derate Above 25°C
5.71mW/°C
TC = 25°C
5.0W
Derate Above 25°C
28.6mW/°C
TJ Junction Temperature Range
-65 to +200°C
Tstg Storage Temperature Range
-65 to +200°C
THERMAL PROPERTIES
Symbols Parameters
RθJA
Thermal Resistance, Junction To Ambient
RθJC
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
175
35
Unit
°C/W
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 7744
Website: http://www.semelab-tt.com
Issue 2
Page 1 of 3


2N3634 Datasheet
Recommendation 2N3634 Datasheet
Part 2N3634
Description SILICON PNP TRANSISTOR
Feature 2N3634; SILICON PNP TRANSISTOR 2N3634 • General Purpose PNP Silicon Transistor • High Voltage, High Speed Sa.
Manufacture TT
Datasheet
Download 2N3634 Datasheet




TT 2N3634
SILICON PNP TRANSISTOR
2N3634
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise stated)
Symbols Parameters
Test Conditions
V(BR)CEO(1)
Collector-Emitter
Breakdown Voltage
IEBO
Emitter Cut-Off Current
IC = -10mA
VBE = -5.0V
VBE = -3.0V
IB = 0
IC = 0
IC = 0
VCB = -100V
IE = 0
ICBO
Collector Cut-Off Current
TA = 150°C
ICEO
Collector-Emitter
Cut-off Current
VCB = -140V
VCE = -100V
IC = -0.10mA
IE = 0
VCE = -10V
IC = -1.0mA
VCE = -10V
hFE(1)
DC Current Gain
IC = -10mA
IC = -50mA
VCE = -10V
VCE = -10V
TA = -55°C
IC = -150mA
VCE = -10V
VCE(sat)(1)
Collector-Emitter
Saturation Voltage
IC = -10mA
IC = -50mA
IB = -1.0mA
IB = -5.0mA
VBE(sat)(1)
Base-Emitter
Saturation Voltage
IC = -10mA
IC = -50mA
IB = -1.0mA
IB = -5.0mA
DYNAMIC CHARACTERISTICS
fT Transition Frequency
hfe Small-Signal Current Gain
Cobo
Output Capacitance
Cibo
ton
toff
Input Capacitance
Turn-On Time
Turn-Off Time
IC = -30mA
f = 100MHz
IC = -10mA
f = 1.0KHz
VCB = -20V
f = 1.0MHz
VEB = -1.0V
f = 1.0MHz
VCC = -100V
IC = -50mA
VCE = -30V
VCE = -10V
IE = 0
IC = 0
VBE = 4.0V
IB1 = -IB2 = -5mA
Min. Typ. Max. Unit
-140
V
-10
-50
-100
µA
nA
-10
-10 µA
-10
25
45
50
50 160
25
30
-0.3
-0.65
-0.6
V
-0.8
-0.9
150 MHz
40 160
10 pF
75 pF
400
ns
600
Notes
(1) Pulse Width 300us, δ ≤ 2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 7744
Website: http://www.semelab-tt.com
Issue 2
Page 2 of 3



TT 2N3634
SILICON PNP TRANSISTOR
2N3634
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
6.10 (0.240)
6.60 (0.260)
12.70
(0.500)
min.
(00.0.8395)max.
0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.74 (0.029)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
2
13
2.54
(0.100)
45°
TO39 (TO-205AD) METAL PACKAGE
Underside View
PIN 1 - Emitter
PIN 2 - Base
PIN 3 - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 7744
Website: http://www.semelab-tt.com
Issue 2
Page 3 of 3







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