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2N3634 Dataheets PDF



Part Number 2N3634
Manufacturers TT
Logo TT
Description SILICON PNP TRANSISTOR
Datasheet 2N3634 Datasheet2N3634 Datasheet (PDF)

SILICON PNP TRANSISTOR 2N3634 • General Purpose PNP Silicon Transistor • High Voltage, High Speed Saturated Switching • Low Power Amplifier Applications • Hermetic TO39 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -140V VCEO Collector – Emitter Voltage -140V VEBO Emitter – Base Voltage -5.0V IC Continuous Collector Current -1.0A PD Total Power Dissipation at TA = 25°C 1.0W Derate Above 25°C 5.71mW/.

  2N3634   2N3634



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SILICON PNP TRANSISTOR 2N3634 • General Purpose PNP Silicon Transistor • High Voltage, High Speed Saturated Switching • Low Power Amplifier Applications • Hermetic TO39 Package • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VCBO Collector – Base Voltage -140V VCEO Collector – Emitter Voltage -140V VEBO Emitter – Base Voltage -5.0V IC Continuous Collector Current -1.0A PD Total Power Dissipation at TA = 25°C 1.0W Derate Above 25°C 5.71mW/°C TC = 25°C 5.0W Derate Above 25°C 28.6mW/°C TJ Junction Temperature Range -65 to +200°C Tstg Storage Temperature Range -65 to +200°C THERMAL PROPERTIES Symbols Parameters RθJA Thermal Resistance, Junction To Ambient RθJC Thermal Resistance, Junction To Case Min. Typ. Max. 175 35 Unit °C/W °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is b.


JANTXV4N24A 2N3634 2N3634


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