P-HEMT. CFH800 Datasheet

CFH800 P-HEMT. Datasheet pdf. Equivalent

CFH800 Datasheet
Recommendation CFH800 Datasheet
Part CFH800
Description P-HEMT
Feature CFH800; P - HEMT CFH800 __________________________________________________________________________________.
Manufacture Infineon
Datasheet
Download CFH800 Datasheet




Infineon CFH800
P - HEMT
CFH800
________________________________________________________________________________________________________
Preliminary Datasheet
Features
Low noise figure and high associated gain for
high IP3 receiver stages up to 4GHz
Suitable for PCS CDMA and UMTS applications
(F = 0.50dB; Ga = 17dB @ 3V; 30mA; f=1.8GHz)
Low cost miniature package SOT343
LG = 0.4µm; WG = 800µm
Tape and Reel packaging
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Pin assignment:
1 = gate
2 = source
3 = drain
4 = source
Type
CFH 800
Marking
N8s
Ordering code
(taped)
on request
Package 1)
SOT343
Maximum ratings
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature range
Total power dissipation (TS < tbd°C) 2)
Symbol
VDS
VDG
VGS
ID
TCh
Tstg
Ptot
Thermal resistance
Channel-soldering point source
RthChS
1) Dimensions see page 7
2) TS: Temperature measured at soldering point
5.5
6.5
-2.0
160
150
-65...+150
350
198
Unit
V
V
V
mA
°C
°C
mW
K/W
Infineon Technologies
pg. 1/7
01.03.2002
WS GS CE GaAs



Infineon CFH800
P - HEMT
CFH800
________________________________________________________________________________________________________
Electrical characteristics at TA = 25°C
unless otherwise specified
Characteristics
Symbol
Drain-source saturation current
VDS = 3 V VGS = 0 V
Pinch-off voltage
VDS = 3 V ID = 1 mA
Gate leakage current
VDS = 3 V ID = 30 mA
Transconductance
VDS = 3 V ID = 30 mA
Noise figure*
VDS = 3 V ID = 10 mA
VDS = 3 V ID = 30 mA
f = 1.8 GHz
f = 1.8 GHz
Associated gain*
VDS = 3 V ID = 10 mA
VDS = 3 V ID = 30 mA
f = 1.8 GHz
f = 1.8 GHz
IIP3*
VDS = 3 V
VDS = 3 V
ID = 10 mA
ID = 30 mA
f = 1.8 GHz
f = 1.8 GHz
IDSS
VGS(P)
IG
gm
F
Ga
IIP3
min
0
-0.7
-
140
-
-
16
-
typ
80
-0.25
-
200
0.56
0.50
15
17
8.5
13
max
140
0.0
10
-
-
1
-
-
Unit
mA
V
µA
mS
dB
dB
dBm
* Parameters are measured for input impedance for minimum noise figure and output impedance for
maximum gain.
Infineon Technologies
pg. 2/7
01.03.2002
WS GS CE GaAs



Infineon CFH800
P - HEMT
CFH800
________________________________________________________________________________________________________
Typical Common Source S – Parameters
@ 3V; 10mA; Zo = 50
f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang
0.1
0.9625 -14.2 11.1164 168.7 0.0338
73.6 0.6449 -15.7
0.2
0.9396
-22 10.9663 163.1 0.0385
72.1 0.6334 -22.4
0.3
0.9166 -33.4 10.6984
155 0.0481
68.9 0.6178 -32.7
0.4
0.8861 -44.6 10.2628 146.9 0.0607
64.2 0.594 -42.2
0.5
0.8513 -54.8
9.74 139.7 0.0725
59.8 0.5711 -51.3
0.6
0.8163 -64.6 9.2192 132.8 0.0825
55.8 0.5428 -59.5
0.7
0.7865 -73.6 8.7366 126.7 0.092
52.8 0.5211 -67.5
0.8
0.7582 -82.5 8.2519 121.1 0.0982
50.2 0.494
-75
0.9
0.7312 -90.6 7.7566
116 0.1035
48.2 0.472 -81.9
1
0.708 -98.4 7.3039 111.1 0.1072
45.4 0.4472 -88.7
1.1
0.6843 -105.7 6.8673 106.4 0.1117
43.5 0.4253 -94.7
1.2
0.6665 -112.8 6.4912 102.1 0.1159
41.1 0.3995 -100.6
1.3
0.6535 -119.1 6.1071
98.1 0.1194
39.9 0.379 -106.3
1.4
0.6451 -125.2 5.7901
94.3 0.1225
38.7 0.3581 -112.7
1.5
0.6368 -130.7 5.4939
90.6 0.1245
37.7 0.3445 -118.4
1.6
0.6299 -136.3 5.2283
87.1 0.1262
36.6 0.3277 -124.5
1.7
0.6246 -141.4 4.9491
83.9 0.1274
35.6 0.3156 -130.7
1.8
0.6208 -146.4 4.7146
80.8 0.1286
35 0.3044
-138
1.9
0.6164 -151.1 4.4907
77.5 0.1302
34.4 0.3001 -144.8
2
0.6147 -155.6 4.2842
74.7 0.1314
34 0.2953 -151.5
2.1
0.6145
-160 4.081
72.1 0.1324
33.3 0.2966 -157.7
2.2
0.6151 -163.8 3.9114
69.3 0.1328
32.9 0.2982 -163.8
2.3
0.6162 -167.7 3.7677
66.3 0.1342
32.6 0.3056 -169.5
2.4
0.6171 -171.1 3.6238
63.5 0.1345
32.5 0.3107 -174.2
2.5
0.6184 -174.8 3.4535
61.1 0.1361
32 0.3205 -178.8
3
0.6168 171.5 2.8397
50.5 0.1374
31.8 0.3641 166.2
3.5
0.612 160.2 2.4102
40.2 0.1387
34 0.3952 158.3
4
0.6154 150.8 2.1095
32.1 0.1422
37.4 0.4028 154.3
4.5
0.6081 142.7 1.9033
23.7 0.1523
40.5 0.3976 150.6
5
0.6042 134.8 1.7615
15 0.1667
41.9 0.3967 145.2
5.5
0.6158
127 1.6573
5.5 0.1839
41 0.3972 137.2
6
0.6341 118.7 1.5577
-5 0.1931
38 0.4 123
Typical Common Source Noise – Parameters
@ 3V; 10mA; Zo = 50
f[GHz]
0.9
1.8
2.4
3.0
Fmin [dB]
0.41
0.56
0.61
0.69
Ga [dB]
18.7
15.6
13.5
11.4
Mag opt ) Phase(Γopt) [deg] Rn/50
0.33 23 0.14
0.37 98 0.10
0.37 136 0.10
0.38 170 0.06
Infineon Technologies
pg. 3/7
01.03.2002
WS GS CE GaAs







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