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SMBJ6.5A Dataheets PDF



Part Number SMBJ6.5A
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Surface Mount Transient Voltage Suppressor
Datasheet SMBJ6.5A DatasheetSMBJ6.5A Datasheet (PDF)

SMBJ SERIES Taiwan Semiconductor 600W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES ● Ideal for automated placement ● Glass passivated junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Protect sensitive circuit from damage by high volta.

  SMBJ6.5A   SMBJ6.5A


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SMBJ SERIES Taiwan Semiconductor 600W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES ● Ideal for automated placement ● Glass passivated junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Protect sensitive circuit from damage by high voltage transients ● Lighting, ESD transient voltage protection of IC, system ● Inductive switching load protection of IC, system ● Electrical Fast Transient Immunity protection of IC, system KEY PARAMETERS PARAMETER VALUE UNIT VWM VBR (uni - directional) VBR (bi - directional) PPK TJ MAX Package 5 - 170 V 6.4 - 231 V 6.4 - 231 V 600 W 150 DO-214AA (SMB) Configuration Single die MECHANICAL DATA ● Case: DO-214AA (SMB) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: As marked ● Weight: 0.090g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE Non-repetitive peak impulse power dissipation with 10/1000µs waveform(1) PPK 600 Steady state power dissipation at TA = 25°C PD Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load for Uni-directional only IFSM Forward Voltage @ IF = 50A for Uni-directional only(2) VF 3 100 3.5 / 5.0 Junction temperature TJ - 55 to +150 Storage temperature TSTG - 55 to +150 Notes: 1. Non-repetitive current pulse per Fig.3 and derated above TA = 25°C per Fig.2 2. VF = 3.5V on SMBJ5.0 - SMBJ90 devices and VF = 5.0V on SMBJ100 - SMBJ170 devices Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types SMBJ5.0 - types SMBJ170 2. Electrical characteristics apply in both directions UNIT W W A V °C °C 1 Version: R2104 SMBJ SERIES Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance Junction-to-ambient thermal resistance SYMBOL RӨJC RӨJA TYP 10 55 UNIT °C/W °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number Marking code Breakdown voltage VBR@IT (V) (Note 1) Min Max SMBJ5.0 KD 6.40 7.30 SMBJ5.0A SMBJ5V0A KE 6.40 7.00 SMBJ6.0 KF 6.67 8.15 SMBJ6.0A SMBJ6V0A KG 6.67 7.37 SMBJ6.5 KH 7.22 8.82 SMBJ6.5A SMBJ6V5A KK 7.22 7.98 SMBJ7.0 KL 7.78 9.51 SMBJ7.0A SMBJ7V0A KM 7.78 8.60 SMBJ7.5 KN 8.33 10.3 SMBJ7.5A SMBJ7V5A KP 8.33 9.21 SMBJ8.0 KQ 8.89 10.9 SMBJ8.0A SMBJ8V0A KR 8.89 9.83 SMBJ8.5 KS 9.44 11.5 SMBJ8.5A SMBJ8V5A KT 9.44 10.4 SMBJ9.0 KU 10.0 12.2 SMBJ9.0A SMBJ9V0A KV 10.0 11.1 SMBJ10 KW 11.1 13.6 SMBJ10A KX 11.1 12.3 SMBJ11 KY 12.2 14.9 SMBJ11A KZ 12.2 13.5 SMBJ12 LD 13.3 16.3 SMBJ12A LE 13.3 14.7 SMBJ13 LF 14.4 17.6 SMBJ13A LG 14.4 15.9 SMBJ14 LH 15.6 19.1 SMBJ14A LK 15.6 17.2 SMBJ15 LL 16.7 20.4 SMBJ15A LM 16.7 18.5 SMBJ16 LN 17.8 21.8 SMBJ16A LP 17.8 19.7 SMBJ17 LQ 18.9 23.1 SMBJ17A LR 18.9 20.9 SMBJ18 LS 20.0 24.4 SMBJ18A LT 20.0 22.1 SMBJ20 LU 22.2 27.1 SMBJ20A LV 22.2 24.5 SMBJ22 LW 24.4 29.8 SMBJ22A LX 24.4 26.9 SMBJ24 LY 26.7 32.6 SMBJ24A LZ 26.7 29.5 Test current IT (mA) 10 10 10 10 10 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 2 Working stand-off voltage VWM (V) Maximum blocking leakage current ID@VWM (µ A) 5.0 800 5.0 800 6.0 800 6.0 800 6.5 500 6.5 500 7.0 200 7.0 200 7.5 100 7.5 100 8.0 50 8.0 50 8.5 10 8.5 10 9.0 5 9.0 5 10 5 10 5 11 1 11 1 12 1 12 1 13 1 13 1 14 1 14 1 15 1 15 1 16 1 16 1 17 1 17 1 18 1 18 1 20 1 20 1 22 1 22 1 24 1 24 1 Maximum peak impulse current IPP (A) (Note 2) Maximum clamping voltage VC@IPP (V) 65.0 9.6 68.0 9.2 55.0 11.4 61.0 10.3 51.0 12.3 56.0 11.2 47.0 13.3 52.0 12.0 44.0 14.3 48.0 12.9 42.0 15.0 46.0 13.6 39.0 15.9 43.0 14.4 37.0 16.9 40.0 15.4 33.0 18.8 37.0 17.0 31.0 20.1 34.0 18.2 28.0 22.0 31.0 19.9 26.0 23.8 29.0 21.5 24.4 25.8 27.0 23.2 23.1 26.9 25.1 24.4 21.8 28.8 24.2 26.0 20.0 30.5 22.8 27.6 19.5 32.2 21.5 29.2 17.6 35.8 19.4 32.4 15.0 39.4 17.7 35.5 14.6 43.0 16.0 38.9 Version: R2104 SMBJ SERIES Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number Marking code Breakdown voltage VBR@IT (V) (Note 1) Min Max SMBJ26 MD 28.9 35.3 SMBJ26A ME 28.9 31.9 SMBJ28 MF 31.1 38.0 SMBJ28A MG 31.1 34.4 SMBJ30 MH 33.3 40.7 SMBJ30A MK 33.3 36.8 SMBJ33 ML 36.7 44.9 SMBJ33A MM 36.7 40.6 SMBJ36 MN 40.0 48.9 SMBJ36A MP 40.0 44.2 SMBJ40 MQ 44.4 54.3 .


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