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SMBJ8.5 Dataheets PDF



Part Number SMBJ8.5
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description Surface Mount Transient Voltage Suppressor
Datasheet SMBJ8.5 DatasheetSMBJ8.5 Datasheet (PDF)

SMBJ SERIES Taiwan Semiconductor 600W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES ● Ideal for automated placement ● Glass passivated junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Protect sensitive circuit from damage by high volta.

  SMBJ8.5   SMBJ8.5



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SMBJ SERIES Taiwan Semiconductor 600W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES ● Ideal for automated placement ● Glass passivated junction ● Excellent clamping capability ● Fast response time: Typically less than 1.0ps ● Typical IR less than 1μA above 10V ● Meets ISO 7637-2 (Pulse 1/2a/2b/3a/3b) ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● Protect sensitive circuit from damage by high voltage transients ● Lighting, ESD transient voltage protection of IC, system ● Inductive switching load protection of IC, system ● Electrical Fast Transient Immunity protection of IC, system KEY PARAMETERS PARAMETER VALUE UNIT VWM VBR (uni - directional) VBR (bi - directional) PPK TJ MAX Package 5 - 170 V 6.4 - 231 V 6.4 - 231 V 600 W 150 DO-214AA (SMB) Configuration Single die MECHANICAL DATA ● Case: DO-214AA (SMB) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: As marked ● Weight: 0.090g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL VALUE Non-repetitive peak impulse power dissipation with 10/1000µs waveform(1) PPK 600 Steady state power dissipation at TA = 25°C PD Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load for Uni-directional only IFSM Forward Voltage @ IF = 50A for Uni-directional only(2) VF 3 100 3.5 / 5.0 Junction temperature TJ - 55 to +150 Storage temperature TSTG - 55 to +150 Notes: 1. Non-repetitive current pulse per Fig.3 and derated above TA = 25°C per Fig.2 2. VF = 3.5V on SMBJ5.0 - SMBJ90 devices and VF = 5.0V on SMBJ100 - SMBJ170 devices Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types SMBJ5.0 - types SMBJ170 2. Electrical characteristics apply in both directions UNIT W W A V °C °C 1 Version: R2104 SMBJ SERIES Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance Junction-to-ambient thermal resistance SYMBOL RӨJC RӨJA TYP 10 55 UNIT °C/W °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number Marking code Breakdown voltage VBR@IT (V) (Note 1) Min Max SMBJ5.0 KD 6.40 7.30 SMBJ5.0A SMBJ5V0A KE 6.40 7.00 SMBJ6.0 KF 6.67 8.15 SMBJ6.0A SMBJ6V0A KG 6.67 7.37 SMBJ6.5 KH 7.22 8.82 SMBJ6.5A SMBJ6V5A KK 7.22 7.98 SMBJ7.0 KL 7.78 9.51 SMBJ7.0A SMBJ7V0A KM 7.78 8.60 SMBJ7.5 KN 8.33 10.3 SMBJ7.5A SMBJ7V5A KP 8.33 9.21 SMBJ8.0 KQ 8.89 10.9 SMBJ8.0A SMBJ8V0A KR 8.89 9.83 SMBJ8.5 KS 9.44 11.5 SMBJ8.5A SMBJ8V5A KT 9.44 10.4 SMBJ9.0 KU 10.0 12.2 SMBJ9.0A SMBJ9V0A KV 10.0 11.1 SMBJ10 KW 11.1 13.6 SMBJ10A KX 11.1 12.3 SMBJ11 KY 12.2 14.9 SMBJ11A KZ 12.2 13.5 SMBJ12 LD 13.3 16.3 SMBJ12A LE 13.3 14.7 SMBJ13 LF 14.4 17.6 S.


SMBJ8.0A SMBJ8.5 SMBJ8.5A


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