CMOS SRAM
K6T4008C1C Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No. History 0.0 Initial ...
Description
K6T4008C1C Family
Document Title
512Kx8 bit Low Power CMOS Static RAM
Revision History
Revision No. History 0.0 Initial draft 1.0 Finalize
CMOS SRAM
Draft Date October 20,1998
April 12, 1999
Remark Preliminary
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0
April 1999
K6T4008C1C Family
CMOS SRAM
512Kx8 bit Low Power CMOS Static RAM
FEATURES
Process Technology: TFT Organization: 512Kx8 Power Supply Voltage: 4.5~5.5V Low Data Retention Voltage: 2V(Min) Three state output and TTL Compatible Package Type: 32-DIP-600, 32-SOP-525,
32-TSOP2-400F/R
GENERAL DESCRIPTION
The K6T4008C1C families are fabricated by SAMSUNG′s advanced CMOS process technology. The families support various operating temperature ra...
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