CMOS SRAM
K6T4008V1C, K6T4008U1C Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision H...
Description
K6T4008V1C, K6T4008U1C Family
Document Title
512Kx8 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No. History
0.0 Initial Draft
0.1 Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1 : 3mA → 4mA ICC2 : 35mA → 30mA ISB : 0.5mA → 0.3mA ISB1 : 10µA → 15µA for commercial parts - Add 32-TSOP1-0820
0.11 Errata correct - 32-TSOP1-0813 products: T → TG
1.0 Finalize
Draft Data January 13, 1998
June 12, 1998
Remark Advance
Preliminary
November 7, 1998
January 15, 1999
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0 January 1999
K6T4008V1C, K6T4008U1C Family
CMOS SRAM
512K×8 bit Low Power and Low ...
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