CMOS SRAM
K6T4016V3C, K6T4016U3C Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision ...
Description
K6T4016V3C, K6T4016U3C Family
Document Title
256Kx16 bit Low Power and Low Voltage CMOS Static RAM
CMOS SRAM
Revision History
Revision No History 0.0 Initial draft
0.1 0.11
Revised
- Speed bin change
Commercial : 70/85ns → 70/85/100ns Industrial : 85/100ns → 70/85/100ns - DC Characteristics change
ICC : 5mA at read/write → 4mA at read ICC1 : 5mA → 6mA ICC2 : 50mA → 45mA ISB : 0.5mA → 0.3mA ISB1 : 10µA → 15µA for commercial parts Errata correction
1.0 Finalize
Draft Date January 13, 1998
June 12, 1998
Remark Advance
Preliminary
August 13, 1998 November 16, 1998
Final
The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices.
1 Revision 1.0 November 1998
K6T4016V3C, K6T4016U3C Family
CMOS SRAM
256Kx16 bit Low Power and Low Voltage CMOS...
Similar Datasheet