K6R1004V1D

K6R1004V1D PRELIMINARY PRELIfMorINAAT&RTY CMOS SRAM Document Title 64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges. Revision History Rev.No. History Rev. 0.0 Rev. 0.1 Rev. 0.2 Initial document. Speed bin modify Current modify Rev. 1.0 1. Delete 12ns speed bin. 2. Change Icc for Industrial mode. Item Previous ICC(Industrial) 8ns 10ns 100mA 85mA Current 90mA 75mA Draft Data Remark May. 11. 2001 June. 18. 2001 September. 9. 2001 Preliminary Preliminary Preliminary December. 18. 2001 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Revision 1.0 December 2001 K6R1004V1D ...