32M x 8 Bit , 16M x 16 Bit NAND Flash Memory
Revision No. History
0.0 Initial issue.
Apr. 25th 2002
1.0 1.Pin assignment of TBGA dummy ball is changed.
(before) DNU --> (after) N.C
2. Add the Rp vs tr ,tf & Rp vs ibusy graph for 1.8V device (Page 36)
3. Add the data protection Vcc guidence for 1.8V device - below about
1.1V. (Page 37)
4. Add the specification of Block Lock scheme.(Page 32~35)
5. Pin assignment of TBGA A3 ball is changed.
(before) N.C --> (after) Vss
6. Pin assignment of WSOP #38 pin is changed.
(before) LOCKPRE --> (after) N.C
2.0 1. The Maximum operating current is changed.
Program : Icc2 20mA-->25mA
Erase : Icc3 20mA-->25mA
Jan. 17th 2003
2.1 The min. Vcc value 1.8V devices is changed.
K9F56XXQ0C : Vcc 1.65V~1.95V --> 1.70V~1.95V
Mar. 5th 2003
2.2 Pb-free Package is added.
Mar. 13rd 2003
2.3 Errata is added.(Front Page)-K9F56XXQ0C
tWC tWH tWP tRC tREH tRP tREA tCEA
Specification 45 15 25 50 15 25 30 45
Relaxed value 60 20 40 60 20 40 40 55
Mar. 26th 2003
2.4 New definition of the number of invalid blocks is added.
Apr. 4th 2003
(Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb
Jun. 30th 2003
2.5 1. The guidence of LOCKPRE pin usage is changed.
Don’t leave it N.C. Not using LOCK MECHANISM & POWER-ON AUTO-
READ, connect it Vss.(Before)
--> Not using LOCK MECHANISM & POWER-ON AUTO-READ, connect
it Vss or leave it N.C(After)
2. 2.65V device is added.
3.Note is added.
(VIL can undershoot to -0.4V and VIH can overshoot to VCC +0.4V for
durations of 20 ns or less.)
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s Flash web site.
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.