2-Watt HFET
FP31QF
2-Watt HFET
The Communications Edge TM Product Information
Product Features
Product Description
Functional Di...
Description
FP31QF
2-Watt HFET
The Communications Edge TM Product Information
Product Features
Product Description
Functional Diagram
50 – 4000 MHz 18 dB Gain @ 900 MHz +34 dBm P1dB +46 dBm Output IP3 High Drain Efficiency Pb-free 6mm 28-pin QFN package MTTF > 100 years
Applications
Mobile Infrastructure CATV / DBS W-LAN / ISM RFID Defense / Homeland Security Fixed Wireless
The FP31QF is a high performance 2-Watt HFET (Heterostructure FET) in a low-cost lead-free 28-pin 6x6 mm QFN (Quad Flatpack, No-Lead) surface-mount package. This device works optimally at a drain bias of +9 V and 450 mA to achieve +46 dBm output IP3 performance and an output power of +34 dBm at 1-dB compression.
The device conforms to WJ Communications’ long history of producing high reliability and quality components. The FP31QF has an associated MTTF of a minimum of 100 years at a mounting temperature of 85°C. All devices are 100% RF & DC tested.
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