BS62LV8000

BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 1M X 8 bit „ GENERAL DESCRIPTION BS62LV8000 Wide Vcc operation voltage : 2.4V ~ 5.5V Very low power consumption : Vcc = 3V C-grade: 20mA (Max.) operating current I -grade: 25mA (Max.) operating current 0.5uA (Typ.) CMOS standby current Vcc = 5V C-grade: 45mA (Max.) operation current I -grade: 50mA (Max.) operating current 3uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max) at Vcc = 3V -10 100ns (Max) at Vcc = 3V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE1, CE2 and OE options The BS62LV8000 is a high performance, very low power CMOS Static Random Access Memory organized as 1,048,576 words by 8 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.5uA and maximum access time of 70ns in 3V operation. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable(CE2) and active LOW output enable (OE) and three-state output drivers. The BS62LV8000 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62LV8000 is available in 44 pin TSOP2 and 48-pin BGA type. „ PRODUCT FAMILY PRODUCT FAMILY BS62LV8000EC BS62LV8000BC BS62LV800...