BS62UV2001

BSI „ FEATURES Ultra Low Power/Voltage CMOS SRAM 256K X 8 bit „ DESCRIPTION BS62UV2001 Wide Vcc operation voltage : 1.8V ~ 3.6V Ultra low power consumption : Vcc = 2.0V C-grade : 15mA (Max.) operating current I- grade : 20mA (Max.) operating current 0.08uA (Typ.) CMOS standby current Vcc = 3.0V C-grade : 20mA (Max.) operating current I- grade : 25mA (Max.) operating current 0.1uA (Typ.) CMOS standby current High speed access time : -70 70ns(Max.) at Vcc = 2.0V -10 100ns(Max.) at Vcc = 2.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE2, CE1, and OE options The BS62UV2001 is a high performance, Ultra low power CMOS Static Random Access Memory organized as 262,144 words by 8 bits and operates from a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.1uA and maximum access time of 70ns in 3.0V operation. Easy memory expansion is provided by an active LOW chip enable (CE1), an active HIGH chip enable (CE2), and active LOW output enable (OE) and three-state output drivers. The BS62UV2001 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS62UV2001 is available in the JEDEC standard 32 pin 450mil Plastic SOP, 8mmx13.4mm STSOP and 8mmx20mm TSOP. „ PR...