BS817

BS817 P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features · · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets Ideal for Automated Surface Mount Assembly G E D G H K J L M SOT-23 A D TOP VIEW S B C Dim A B C D E G H J K L M Min 0.37 1.19 2.10 0.89 0.45 1.78 2.65 0.013 0.89 0.45 0.076 Max 0.51 1.40 2.50 1.05 0.61 2.05 3.05 0.15 1.10 0.61 0.178 Mechanical Data · · · · · Case: SOT-23, Plastic Terminals: Solderable per MIL-STD-202, Method 208 Terminal Connections (see Diagram) Marking: S17 Weight: 0.008 grams (approx.) All Dimensions in mm Maximum Ratings Drain-Source Voltage Drain-Gate Voltage @ TA = 25°C unless otherwise specified Symbol -VDSS -VDGS VGS -ID Pd Tj, TSTG Value 200 200 ±20 100 310 -55 to +150 Unit V V V mA mW °C Characteristic Gate-Source Voltage (pulsed) (Note 2) Drain Current (continuous) Power Dissipation @ TC = 50°C (Note 1) Operating and Storage Temperature Range Inverse Diode @ TA = 25°C unless otherwise specified Characteristic Symbol IF VF Value 0.3 0.85 Unit A V Max Forward Current (continuous) Forward Voltage Drop (typical) @ VGS = 0, IF = 0.3A, Tj = 25°C Notes: 1. Device mounted on Ceramic Substrate 0.7mm x 2.5cm2 area. 2. Pulse Test: Pulse width = 80µs, duty cycle = 1%. DS11401 Rev. D-3 1 of 2 BS817 Electrical Characteristics Characteristic Drain-Source Breakdown Voltage Gate-Body Leakage Current Drain-Source Cutoff Current Gate-Source Threshold Voltage Drain-Source ON Resi...