BS829
DMOS Transistors (P-Channel)
SOT-23
.122 (3.1) .118 (3.0) .016 (0.4) 3
FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦
.045 (1.15) .037 ...
BS829
DMOS
Transistors (P-Channel)
SOT-23
.122 (3.1) .118 (3.0) .016 (0.4) 3
FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦
.045 (1.15) .037 (0.95)
Top View
.056 (1.43) .052 (1.33)
1
2 max. .004 (0.1)
High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown
.007 (0.175) .005 (0.125)
.037(0.95) .037(0.95)
MECHANICAL DATA
Case: SOT-23 Plastic Package Weight: approx. 0.008 g Marking S29
.016 (0.4)
.016 (0.4)
.102 (2.6) .094 (2.4)
Dimensions in inches and (millimeters)
Pin configuration 1 = Gate, 2 = Source, 3 = Drain
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) at TSB = 50 °C Power Dissipation at TSB = 50 °C Junction Temperature Storage Temperature Range
1)
Value 400 400 ±20 70 3501) 150 –65 to +150
Unit V V V mA mW °C °C
–VDSS –VDGS VGS – ID Ptot Tj TS
Device on fiberglass substrate, see layout
Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 °C Forward Voltage Drop (typ.) at VGS = 0 V, IF = 350 mA, Tj = 25 °C
4/98
Value 350 1.0
Unit mA V
IF VF
BS829
ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol Drain-Source Breakdown Voltage at –ID = 100 µA, VGS = 0 V Gate-Body Leakage Current, Forward at –VGSF ...