Philips Semiconductors
Product specification
N-channel enhancement mode MOS transistor
FEATURES
• Very low threshold v...
Philips Semiconductors
Product specification
N-channel enhancement mode MOS
transistor
FEATURES
Very low threshold voltage Fast switching Logic level compatible Subminiature surface mount package
BSH105
SYMBOL
d
QUICK REFERENCE DATA
VDS = 20 V ID = 1.05 A
g
RDS(ON) ≤ 250 mΩ (VGS = 2.5 V) VGS(TO) ≥ 0.4 V
s
GENERAL DESCRIPTION
N-channel, enhancement mode, logic level, field-effect power
transistor. This device has very low threshold voltage and extremely fast switching making it ideal for battery powered applications and high speed digital interfacing. The BSH105 is supplied in the SOT23 subminiature surface mounting package.
PINNING
PIN 1 2 3 gate source drain DESCRIPTION
SOT23
3 Top view
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ Ta = 25 ˚C Ta = 100 ˚C Ta = 25 ˚C Ta = 25 ˚C Ta = 100 ˚C MIN. - 55 MAX. 20 20 ±8 1.05 0.67 4.2 0.417 0.17 150 UNIT V V V A A A W W ˚C
THERMAL RESISTANCES
SYMBOL Rth j-a PARAMETER Thermal resistance junction to ambient CONDITIONS FR4 board, minimum footprint TYP. 300 MAX. UNIT K/W
August 1998
1
Rev 1.000
Philips Semiconductors
Product specification
N-channel enhancement mode MOS
transistor
ELECTRICAL CHARACTERISTICS
Tj= 25˚C unless other...