BSH121

BSH121 N-channel enhancement mode field-effect transistor Rev. 01 — 14 August 2000 Product specification 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™1 technology. Product availability: BSH121 in SOT323. 2. Features s s s s TrenchMOS™ technology Very fast switching Low threshold voltage Subminiature surface mount package. 3. Applications s Battery management s High speed switch s Logic level translator. c c 4. Pinning information Table 1: Pin 1 2 3 Pinning - SOT323, simplified outline and symbol Description gate (g) 3 d Simplified outline Symbol source (s) drain (d) g 1 Top view 2 MBC870 s 03ab30 SOT323 N-channel MOSFET 1. TrenchMOS is a trademark of Royal Philips Electronics. Philips Semiconductors BSH121 N-channel enhancement mode field-effect transistor 5. Quick reference data Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions Tj = 25 to 150 °C Tsp = 25 °C; VGS = 4.5 V Tsp = 25 °C VGS = 4.5 V; ID = 500 mA VGS = 2.5 V; ID = 75 mA VGS = 1.8 V; ID = 75 mA Typ − − − − 2.3 2.4 3.1 Max 55 300 0.7 150 4.0 5.0 8.0 Unit V mA W °C Ω Ω Ω drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter 6. Limiting values Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain curren...