IGBT
BSM 100 GB 170 DN2
IGBT Power Module Preliminary data • Half-bridge • Including fast free-wheeling diodes • Package wit...
Description
BSM 100 GB 170 DN2
IGBT Power Module Preliminary data Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate RG on,min = 15 Ohm Type BSM 100 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V
VCE
IC
Package HALF-BRIDGE 2
Ordering Code C67070-A2703-A67
1700V 145A
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 145 100
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
290 200
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
1000
W + 150 -55 ... + 150 ≤ 0.13 ≤ 0.4 4000 20 11 F 55 / 150 / 56 Vac mm K/W °C
TC = 25 °C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJCD Vis
-
Semiconductor Group
1
Aug-01-1996
BSM 100 GB 170 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.8 5.5 3.4 4.5 0.8 3.2 6.2 3.9 5.3
V
VGE = VCE, IC = 8 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 100 A, Tj = 25 °C VGE = 15 V, IC = 100 A, Tj = 125 °C
Zero gate voltage collector current
ICES
1 -
mA
VCE = 1700 V, VGE = 0 V, Tj = 25 °C VCE = 1700 V, VGE = 0 V, Tj = 125 °C
Gate-emitter l...
Similar Datasheet
- BSM100GB170DN2 IGBT - Siemens Semiconductor Group