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Si7110DN Dataheets PDF



Part Number Si7110DN
Manufacturers Vishay
Logo Vishay
Description N-Channel 20-V (D-S) Fast Switching MOSFET
Datasheet Si7110DN DatasheetSi7110DN Datasheet (PDF)

Si7110DN Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.0053 at VGS = 10 V 0.0078 at VGS = 4.5 V ID (A) 21.1 17.4 Qg (Typ.) 14 nC PowerPAK 1212-8 3.30 mm D 8D 7 D 6 D 5 S 1S 3.30 mm 2 S 3G 4 Bottom View Ordering Information: Si7110DN-T1-E3 (Lead (Pb)-free) Si7110DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free Option Available • TrenchFET® Gen II Power MOSFET • New Low Thermal Resistance PowerPAK® Package wi.

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Si7110DN Vishay Siliconix N-Channel 20-V (D-S) Fast Switching MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 20 0.0053 at VGS = 10 V 0.0078 at VGS = 4.5 V ID (A) 21.1 17.4 Qg (Typ.) 14 nC PowerPAK 1212-8 3.30 mm D 8D 7 D 6 D 5 S 1S 3.30 mm 2 S 3G 4 Bottom View Ordering Information: Si7110DN-T1-E3 (Lead (Pb)-free) Si7110DN-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free Option Available • TrenchFET® Gen II Power MOSFET • New Low Thermal Resistance PowerPAK® Package with Low 1.07 mm Profile • PWM Optimized • 100 % Rg Tested APPLICATIONS • Synchronous Rectification • Synchronous Buck D RoHS COMPLIANT G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 10 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 70 °C ID 21.1 13.5 16.9 10.8 Pulsed Drain Current IDM 60 Continuous Source Current (Diode Cond.


SB3417B Si7110DN Si7386DP


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