Document
Si7110DN
Vishay Siliconix
N-Channel 20-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
20 0.0053 at VGS = 10 V 0.0078 at VGS = 4.5 V
ID (A) 21.1 17.4
Qg (Typ.) 14 nC
PowerPAK 1212-8
3.30 mm
D 8D
7 D
6 D
5
S 1S
3.30 mm
2 S
3G
4
Bottom View
Ordering Information: Si7110DN-T1-E3 (Lead (Pb)-free) Si7110DN-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free Option Available • TrenchFET® Gen II Power MOSFET • New Low Thermal Resistance PowerPAK®
Package with Low 1.07 mm Profile
• PWM Optimized
• 100 % Rg Tested
APPLICATIONS • Synchronous Rectification • Synchronous Buck
D
RoHS
COMPLIANT
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 20
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
21.1 13.5 16.9 10.8
Pulsed Drain Current
IDM 60
Continuous Source Current (Diode Cond.