IGBT
SIMOPAC® Module
BSM 111 AR
VDS = 100 V ID = 200 A R DS(on) = 8.5 mΩ
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Power module Single switch N channel ...
Description
SIMOPAC® Module
BSM 111 AR
VDS = 100 V ID = 200 A R DS(on) = 8.5 mΩ
q q q q q q
Power module Single switch N channel Enhancement mode Package with insulated metal base plate 1) Package outline/Circuit diagram: 1
Type BSM 111 AR Maximum Ratings Parameter Drain-source voltage
Ordering Code C67076-S1013-A2
Symbol
Values 100 100 ± 20 200 600 – 55 … + 150 700 ≤ 0.18 2500 16 11 F 55/150/56
Unit V
VDS VDGR VGS ID ID puls Tj, Tstg Ptot RthJC Vis
– – – –
Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Continuous drain current, TC = 25 ˚C Pulsed drain current, TC = 25 ˚C Operating and storage temperature range Power dissipation, TC = 25 ˚C Thermal resistance Chip-case Insulation test voltage2), t = 1 min. Creepage distance, drain-source Clearance, drain-source DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
1) 2)
A ˚C W K/W Vac mm –
See chapter Package Outline and Circuit Diagrams. Insulation test voltage between drain and base plate referred to standard climate 23/50 in acc. with DIN 50 014, IEC 146, para. 492.1.
Semiconductor Group
24
03.96
BSM 111 AR
Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = 0, ID = 0.25 mA Gate threshold voltage VDS = VGS, ID = 1 mA Zero gate voltage drain current VDS = 100 V, VGS = 0 Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-state resistance VGS = 10 V, ID = 130 A Dynam...
Similar Datasheet
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