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BSM150GB170DN2E3166

Siemens Semiconductor Group

IGBT


Description
BSM150GB170DN2 E3166 IGBT Power Module Preliminary data Half-bridge Including fast free-wheeling diodes Enlarged diode area Package with insulated metal base plate RG on,min = 10 Ohm Type BSM150GB170DN2 E3166 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V VCE IC Package HALF-BRIDGE 2 O...



Siemens Semiconductor Group

BSM150GB170DN2E3166

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