IGBT
BSM 200 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode • Package with insulated metal base plate
Ty...
Description
BSM 200 GAL 120 DN2
IGBT Power Module
Single switch with chopper diode Package with insulated metal base plate
Type BSM 200 GAL 120 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage
VCE
IC
Package
Ordering Code
1200V 290A
HALFBRIDGE GAL 2B C67070-A2301-A70
Symbol
Values 1200 1200
Unit V
VCE VCGR VGE IC
RGE = 20 kΩ
Gate-emitter voltage DC collector current
± 20 A 290 200
TC = 25 °C TC = 80 °C
Pulsed collector current, tp = 1 ms
ICpuls
580 400
TC = 25 °C TC = 80 °C
Power dissipation per IGBT
Ptot
1400
W + 150 -55 ... + 150 ≤ 0.09 ≤ 0.125 2500 20 11 F 55 / 150 / 56 Vac mm K/W °C
TC = 25 °C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Diode thermal resistance, chip-case,chopper Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJCD RTHJCDC Vis
-
Semiconductor Group
1
Jun-13-1996
BSM 200 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.5 3.1 3 12 6.5 3 3.7
V
VGE = VCE, IC = 8 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 200 A, Tj = 25 °C VGE = 15 V, IC = 200 A, Tj = 125 °C
Zero gate voltage collector current
ICES
4 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C
Gate-em...
Similar Datasheet
- BSM200GAL120DN2 IGBT - Siemens Semiconductor Group