BSM200GB120

BSM 200 GB 120 DL IGBT Power Module Preliminary data Low Loss IGBT Low inductance halfbridge Including fast free- wheeling diodes Package with insulated metal base plate Type BSM 200 GB 120 DL Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V VCE IC Package HALF-BRIDGE 2 Ordering Code C67076-A2300-A70 1200V 340A VCE VCGR VGE IC RGE = 20 kΩ Gate-emitter voltage DC collector current ± 20 A 340 200 TC = 25 °C TC = 80 °C Pulsed collector current, tp = 1 ms ICpuls 680 400 TC = 25 °C TC = 80 °C Power dissipation per IGBT Ptot 1400 W + 150 -40 ... + 125 ≤ 0.09 ≤ 0.18 2500 20 11 F 40 / 125 / 56 sec Vac mm K/W °C TC = 25 °C Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJC RthJCD Vis - Semiconductor Group 1 Feb-14-1997 BSM 200 GB 120 DL Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit VGE(th) 4.5 5.5 2.2 2.5 6.5 2.6 3 V VGE = VCE, IC = 8 mA Collector-emitter saturation voltage VCE(sat) - VGE = 15 V, IC = 200 A, Tj = 25 °C VGE = 15 V, IC = 200 A, Tj = 125 °C Zero gate voltage collector current ICES 10 - mA VCE = 1200 V, VGE = 0 V, Tj = 25 °C VCE = 1200 V, VGE = 0 V, Tj = 125 °C Gate-emitte...