Document
HS1A – HS1M
Taiwan Semiconductor
1A, 50V - 1000V High Efficient Surface Mount Rectifier
FEATURES
● Glass passivated chip junction ● Ideal for automated placement ● Fast switching for high efficiency ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21
APPLICATIONS
● DC to DC converter ● Switching mode converters and inverters ● Lighting application ● Snubber ● Freewheeling application
KEY PARAMETERS
PARAMETER VALUE UNIT
IF VRRM
1
A
50 - 1000 V
IFSM TJ MAX Package
30
A
150
°C
DO-214AC (SMA)
Configuration
Single die
MECHANICAL DATA
● Case: DO-214AC (SMA) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.060g (approximately)
DO-214AC (SMA)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
PARAMETER
SYMBOL HS1A HS1B HS1D HS1F HS1G HS1J HS1K HS1M UNIT
Marking code on the device
Repetitive peak reverse voltage Reverse voltage, total rms value
Forward current
Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load
Junction temperature
HS1A HS1B HS1D HS1F HS1G HS1J HS1K HS1M
VRRM
50 100 200 300 400 600 800 1000 V
VR(RMS)
35
70 140 210 280 420 560 700 V
IF
1
A
IFSM
30
A
TJ
- 55 to +150
°C
Storage temperature
TSTG
- 55 to +150
°C
1
Version: L2102
HS1A – HS1M
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER Junction-to-ambient thermal resistance
SYMBOL RӨJA
TYP 70
UNIT °C/W
ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted)
PARAMETER Forward voltage(1) Reverse current @ rated VR(2)
HS1A HS1B HS1D HS1F
HS1G
HS1J HS1K HS1M
CONDITIONS
IF = 1A, TJ = 25°C
TJ = 25°C TJ = 100°C
SYMBOL VF IR
TJ = 125°C
Junction capacitance Reverse recovery time
HS1A
HS1B
HS1D
HS1F HS1G
1MHz, VR = 4.0V
CJ
HS1J
HS1K
HS1M
HS1A
HS1B
HS1D
HS1F IF = 0.5A, IR = 1.0A, HS1G Irr = 0.25A
trr
HS1J
HS1K
HS1M
Notes:
1. Pulse test with PW = 0.3ms
2. Pulse test with PW = 30ms
TYP 20
15
-
-
MAX UNIT
1.0
V
1.3
V
1.7
V
5
µA
50
µA
150
µA
-
pF
-
pF
50
ns
75
ns
ORDERING INFORMATION
ORDERING CODE(1)
PACKAGE
HS1x
DO-214AC (SMA)
Notes: 1. “x” defines voltage from 50V(HS1A) to 1000V(HS1M)
PACKING 7,500 / Tape & Reel
2
Version: L2102
HS1A – HS1M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve
2
AVERAGE FORWARD CURRENT (A)
1
0 25
50
75
100
125
150
LEAD TEMPERATURE (°C)
Fig.3 Typical Reverse Characteristics
CAPACITANCE (pF)
Fig.2 Typical Junction Capacitance
50
40
30 HS1A - HS1G
20
HS1J - HS1M
10 f=1.0MHz
Vsig=50mVp-p 0
0.1
1
10
100
REVERSE VOLTAGE (V)
Fig.4 Typical Forward Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
1000
10 10
100 TJ=125°C
HUSF11ADL- WHS1D 1
TJ=125°C 10.1
HS1GTJ=25°C
10
TJ=25°C 1
10 20 30 40 50 60 70 80 90 100
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
HS1J - HS1M 0.01
Pulse width 300μs
1% duty cyPcluelse width
0.1
0.0001.6
0.8
1.0
1.2
1.4
1.6
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2
FORWARD VOLTAGE (V)
Fig.5 Maximum Non-Repetitive Forward Surge Current
40 8.3ms single half sine wave
30
(A )
PEAK FORWARD SURGE CURRENT (A)
20
10
0
1
10
100
NUMBER OF CYCLES AT 60 Hz
3
Version: L2102
HS1A – HS1M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(TA = 25°C unless otherwise noted)
Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram
4
Version: L2102
PACKAGE OUTLINE DIMENSIONS
DO-214AC (SMA)
HS1A – HS1M
Taiwan Semiconductor
SUGGESTED PAD LAYOUT
MARKING DIAGRAM
P/N
= Marking Code
G
= Green Compound
YW
= Date Code
F
= Factory Code
5
Version: L2102
HS1A – HS1M
Taiwan Semiconductor
Notice
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