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HS1F Dataheets PDF



Part Number HS1F
Manufacturers Taiwan Semiconductor
Logo Taiwan Semiconductor
Description High Efficient Surface-Mount Rectifier
Datasheet HS1F DatasheetHS1F Datasheet (PDF)

HS1A – HS1M Taiwan Semiconductor 1A, 50V - 1000V High Efficient Surface Mount Rectifier FEATURES ● Glass passivated chip junction ● Ideal for automated placement ● Fast switching for high efficiency ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Lighting application ● Snubber ● Freewheeling application KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM 1 .

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HS1A – HS1M Taiwan Semiconductor 1A, 50V - 1000V High Efficient Surface Mount Rectifier FEATURES ● Glass passivated chip junction ● Ideal for automated placement ● Fast switching for high efficiency ● Moisture sensitivity level: level 1, per J-STD-020 ● RoHS Compliant ● Halogen-free according to IEC 61249-2-21 APPLICATIONS ● DC to DC converter ● Switching mode converters and inverters ● Lighting application ● Snubber ● Freewheeling application KEY PARAMETERS PARAMETER VALUE UNIT IF VRRM 1 A 50 - 1000 V IFSM TJ MAX Package 30 A 150 °C DO-214AC (SMA) Configuration Single die MECHANICAL DATA ● Case: DO-214AC (SMA) ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Indicated by cathode band ● Weight: 0.060g (approximately) DO-214AC (SMA) ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL HS1A HS1B HS1D HS1F HS1G HS1J HS1K HS1M UNIT Marking code on the device Repetitive peak reverse voltage Reverse voltage, total rms value Forward current Peak forward surge current, 8.3ms single half sine-wave superimposed on rated load Junction temperature HS1A HS1B HS1D HS1F HS1G HS1J HS1K HS1M VRRM 50 100 200 300 400 600 800 1000 V VR(RMS) 35 70 140 210 280 420 560 700 V IF 1 A IFSM 30 A TJ - 55 to +150 °C Storage temperature TSTG - 55 to +150 °C 1 Version: L2102 HS1A – HS1M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-ambient thermal resistance SYMBOL RӨJA TYP 70 UNIT °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) PARAMETER Forward voltage(1) Reverse current @ rated VR(2) HS1A HS1B HS1D HS1F HS1G HS1J HS1K HS1M CONDITIONS IF = 1A, TJ = 25°C TJ = 25°C TJ = 100°C SYMBOL VF IR TJ = 125°C Junction capacitance Reverse recovery time HS1A HS1B HS1D HS1F HS1G 1MHz, VR = 4.0V CJ HS1J HS1K HS1M HS1A HS1B HS1D HS1F IF = 0.5A, IR = 1.0A, HS1G Irr = 0.25A trr HS1J HS1K HS1M Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms TYP 20 15 - - MAX UNIT 1.0 V 1.3 V 1.7 V 5 µA 50 µA 150 µA - pF - pF 50 ns 75 ns ORDERING INFORMATION ORDERING CODE(1) PACKAGE HS1x DO-214AC (SMA) Notes: 1. “x” defines voltage from 50V(HS1A) to 1000V(HS1M) PACKING 7,500 / Tape & Reel 2 Version: L2102 HS1A – HS1M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.1 Forward Current Derating Curve 2 AVERAGE FORWARD CURRENT (A) 1 0 25 50 75 100 125 150 LEAD TEMPERATURE (°C) Fig.3 Typical Reverse Characteristics CAPACITANCE (pF) Fig.2 Typical Junction Capacitance 50 40 30 HS1A - HS1G 20 HS1J - HS1M 10 f=1.0MHz Vsig=50mVp-p 0 0.1 1 10 100 REVERSE VOLTAGE (V) Fig.4 Typical Forward Characteristics INSTANTANEOUS REVERSE CURRENT (μA) INSTANTANEOUS FORWARD CURRENT (A) 1000 10 10 100 TJ=125°C HUSF11ADL- WHS1D 1 TJ=125°C 10.1 HS1GTJ=25°C 10 TJ=25°C 1 10 20 30 40 50 60 70 80 90 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) HS1J - HS1M 0.01 Pulse width 300μs 1% duty cyPcluelse width 0.1 0.0001.6 0.8 1.0 1.2 1.4 1.6 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE (V) Fig.5 Maximum Non-Repetitive Forward Surge Current 40 8.3ms single half sine wave 30 (A ) PEAK FORWARD SURGE CURRENT (A) 20 10 0 1 10 100 NUMBER OF CYCLES AT 60 Hz 3 Version: L2102 HS1A – HS1M Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) Fig.6 Reverse Recovery Time Characteristic and Test Circuit Diagram 4 Version: L2102 PACKAGE OUTLINE DIMENSIONS DO-214AC (SMA) HS1A – HS1M Taiwan Semiconductor SUGGESTED PAD LAYOUT MARKING DIAGRAM P/N = Marking Code G = Green Compound YW = Date Code F = Factory Code 5 Version: L2102 HS1A – HS1M Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Purchasers are solely responsible for the choice, selection, and use of TSC products and TSC assumes no liability for application assistance or the design of Purchasers’ products. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these pro.


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