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NAND512R3A2S Dataheets PDF



Part Number NAND512R3A2S
Manufacturers Numonyx
Logo Numonyx
Description NAND SLC small page 70 nm Discrete
Datasheet NAND512R3A2S DatasheetNAND512R3A2S Datasheet (PDF)

Numonyx® NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Features  Density – 512 Mbit: 4096 blocks  NAND Flash interface – x8 or x16 bus width – Multiplexed address/data  Memory configuration – Page size: x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words – Block size: x8 device: (16K + 512 spare) Bytes x16 device: (8K + 256 spare) Words  Supply voltage: 1.8 V, 3 V  Read/write performance – Random access: 12 µs (3 V)/15 µs(1.8 V) (max.

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Numonyx® NAND SLC small page 70 nm Discrete 512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V Features  Density – 512 Mbit: 4096 blocks  NAND Flash interface – x8 or x16 bus width – Multiplexed address/data  Memory configuration – Page size: x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words – Block size: x8 device: (16K + 512 spare) Bytes x16 device: (8K + 256 spare) Words  Supply voltage: 1.8 V, 3 V  Read/write performance – Random access: 12 µs (3 V)/15 µs(1.8 V) (max) – Sequential access: 30 ns (3 V)/50 ns (1.8 V)(min) – Page program time: 200 µs (typ) – Block erase time: 2 ms (typ) – Programming performance (typ): x8 device: 2.3 MByte/s x16 device: 2.4 MByte/s  Additional features – Copy back program mode – Error correction code models – Bad blocks management and wear leveling algorithms – Hardware simulation models  Quality and reliability – 100,000 program/erase cycles (with ECC) – 10 years data retenti.


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