Document
Numonyx® NAND SLC small page 70 nm Discrete
512 Mbit, 528 Byte/264 Word page, x8/x16, 1.8 V/3 V
Features
Density – 512 Mbit: 4096 blocks
NAND Flash interface – x8 or x16 bus width – Multiplexed address/data
Memory configuration – Page size: x8 device: (512 + 16 spare) Bytes x16 device: (256 + 8 spare) Words – Block size: x8 device: (16K + 512 spare) Bytes x16 device: (8K + 256 spare) Words
Supply voltage: 1.8 V, 3 V Read/write performance
– Random access: 12 µs (3 V)/15 µs(1.8 V) (max)
– Sequential access: 30 ns (3 V)/50 ns (1.8 V)(min)
– Page program time: 200 µs (typ) – Block erase time: 2 ms (typ) – Programming performance (typ):
x8 device: 2.3 MByte/s x16 device: 2.4 MByte/s Additional features – Copy back program mode – Error correction code models – Bad blocks management and wear leveling algorithms – Hardware simulation models Quality and reliability – 100,000 program/erase cycles (with ECC) – 10 years data retenti.