Document
NAND128-A NAND256-A
128-Mbit or 256-Mbit, 528-byte/264-word page, 3 V, SLC NAND flash memories
Features
• High density NAND flash memories – Up to 256-Mbit memory array – Up to 32-Mbit spare area – Cost effective solutions for mass storage applications
• NAND interface – x8 or x16 bus width – Multiplexed address/ data – Pinout compatibility for all densities
• Supply voltage – VDD = 2.7 to3.6 V
• Page size – x8 device: (512 + 16 spare) bytes – x16 device: (256 + 8 spare) words
• Block size – x8 device: (16 K + 512 spare) bytes – x16 device: (8 K + 256 spare) words
• Page read/program – Random access: 12 µs (3V)/15 us (1.8V) (max) – Sequential access: 50 ns (min) – Page program time: 200 µs (typ)
• Copy back program mode – Fast page copy without external buffering
• Fast block erase – Block erase time: 2 ms (typical)
• Status register
• Electronic signature
• Chip enable ‘don’t care’ – Simple interface with microcontrol.