Document
Preliminary data OptiMOS =Small-Signal-Transistor Feature
BSO4410
Product Summary VDS RDS(on) ID 30 13 11.1 V A m
N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS(on) product (FOM) 150°C operating temperature Avalanche rated dv/dt rated Ideal for fast switching applications
Type BSO4410 Package SO 8 Ordering Code Q67042-S4096 Q67042-S4044-A Marking 4410
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TA=25°C TA=70°C
Symbol ID
Value 11.1 8.9
Unit A
Pulsed drain current
TA=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
44.5 126 6 ±20 2.5 -55... +150 55/150/56 mJ kV/µs V W °C
Avalanche energy, single pulse
ID =11.1 A , VDD =25V, RGS =25
Reverse diode dv/dt
IS =11.1A, VDS =24V, di/dt=200A/µs, Tjmax =150°C
Gate source voltage Power dissipation
TA =25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2001-09-06
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB:
@ min. footprint; t 10 sec. @ 6 cm 2 cooling area 1); t 10 sec.
BSO4410
Symbol min. RthJS RthJA -
Values typ. max. 35 110 50
Unit
K/W
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2
Values typ. 1.6 max. 2
Unit
V
Gate threshold voltage, VGS = VDS
ID =42µA
Zero gate voltage drain current
VDS =30V, VGS =0V, Tj=25°C VDS =30V, VGS =0V, Tj=125°C
µA 0.01 10 1 15.6 11 1 100 100 18.8 13 nA m
Gate-source leakage current
VGS =20V, VDS=0V
Drain-source on-state resistance
VGS =4.5V, ID=9.2A
Drain-source on-state resistance
VGS =10V, ID =11.1A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2
2001-09-06
Preliminary data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Turn-on delay time Rise time Turn-off delay time Fall time gfs Ciss Coss Crss RG td(on) tr td(off) tf
VDD =15V, VGS=10V, ID =11.1A, RG =6.8 VDS 2*ID *RDS(on)max , ID =8.9A VGS =0V, VDS =25V, f=1MHz
BSO4410
Symbol
Conditions min. 13.5 -
Values typ. 27 1020 420 100 1.2 7.5 33 31 23 max. 1280 530 150 11.3 49 47 35
Unit
S pF
ns
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Output charge Gate plateau voltage Reverse Diode Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge VSD trr Qrr
VGS =0V, IF =2A VR =15V, IF =lS , diF /dt=100A/µs
Qgs Qgd Qg Qoss
VDD =15V, ID =11.1A
-
3.2 9.3 17 14.6 3
4 14 21 18 -
nC
VDD =15V, ID =11.1A, VGS =0 to 5V VDS =15V, ID =11.1A, VGS =0V
V(plateau) VDD =15V, ID=11.1A
V
IS ISM
TA=25°C
-
0.84 29 28
2 44.5 1.2 36 35
A
V ns nC
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2001-09-06
Preliminary data 1 Power dissipation Ptot = f (TA )
BSO4410
BSO4410
2 Drain current ID = f (TA)
13
parameter: VGS 10 V
BSO4410
2.8
W
2.4 2.2 2
A
11 10 9
Ptot
ID
20 40 60 80 100 120
1.8 1.6 1.4
8 7 6
1.2 1 0.8 0.6 0.4 0.2 0 0 5 4 3 2 1
°C
TA
160
0 0
20
40
60
80
100
120
°C
TA
160
3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25 °C
10
2 BSO4410
4 Transient thermal impedance ZthJS = f (tp ) parameter : D = tp /T
10 2
tp = 200.0µs
= RD
o S( n)
V
DS
BSO4410
A
K/W
10
1
1 ms
10 1
ID
10 ms
Z thJS
10 0
10 0 D = 0.50 10
-1
0.20 0.10
10 -1 DC 10 -2
0.05 single pulse 0.02 0.01
10 -2 -1 10
10
0
10
1
V
10
2
10 -3 -5 -4 -3 -2 -1 0 10 10 10 10 10 10
10
1
s
10
3
VDS
Page 4
tp
2001-09-06
Preliminary data 5 Typ. output characteristic ID = f (VDS ); Tj=25°C parameter: tp = 80 µs
BSO4410
BSO4410
6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS
m
VGS [V] a 2.8 b 3.0 3.2 3.4 3.6 3.8 4.0 4.5 10.0
28
A
24 22
Ptot = 2.5W
i
42
BSO4410
d
e
hgf e
36 32 28 24
g f
20
c d
ID
18 16 14 12 10 8 6 4 2 0 0 0.5 1 1.5 2 2.5 3 3.5
a b c d
e f g h i
RDS(on)
20 16 12 8
VGS [V] = h i
4 0 0
d 3.4
e f 3.6 3.8
g 4.0
h i 4.5 10.0
4
V
5
4
8
12
16
A
24
VDS
ID
7 Typ. transfer characteristics
ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 80 µs
25
8 Typ. forward transconductance gfs = f(ID ); Tj=25°C parameter: gfs
50
S A
40 35 15
g fs
0.5 1 1.5 2 2.5 3 4
ID
30 25
10
20 15
5
10 5
0 0
VDS V
0 0
5
10
15
20
25
30
35
40
A ID
50
Page 5
2001-09-06
Preliminary data 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = 11.1 A, VGS = 10 V
BSO4410
BSO4410
10 Gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS , ID = 42 µA
2.5
m
28
24 22
V V GS(th)
max.
RDS(on)
20 18 16 14 12 10 8 6 4 2 0 .