Preliminary data OptiMOS =Small-Signal-Transistor Feature
BSO4804
Product Summary VDS RDS(on) ID 30 20 8 V A m
N-...
Preliminary data OptiMOS =Small-Signal-
Transistor Feature
BSO4804
Product Summary VDS RDS(on) ID 30 20 8 V A m
N-Channel Enhancement mode Logic Level Excellent Gate Charge x RDS(on) product (FOM) 150°C operating temperature Avalanche rated dv/dt rated Ideal for fast switching applications
Type BSO4804 Package SO 8 Ordering Code Q67042-S4097 Marking 4804
Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TA=25°C TA=70°C
Symbol ID
Value 8 6.4
Unit A
Pulsed drain current
TA=25°C
ID puls EAS dv/dt VGS Ptot Tj , Tstg
32 90 6 ±20 2 -55... +150 55/150/56 mJ kV/µs V W °C
Avalanche energy, single pulse
ID =8 A , VDD =25V, RGS =25
Reverse diode dv/dt
IS =8A, VDS =24V, di/dt=200A/µs, Tjmax=150°C
Gate source voltage Power dissipation
TA =25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2001-09-06
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point SMD version, device on PCB:
@ min. footprint; t 10 sec. @ 6 cm 2 cooling area 1); t 10 sec.
BSO4804
Symbol min. RthJS RthJA -
Values typ. max. 45 110 62.5
Unit
K/W
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0V, ID =1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) 30 1.2
Values typ. 1.6 max. 2
Unit
V
Gate threshold voltage, VGS = VDS
ID =30µA
Zero gate vo...
