BSO615

Preliminary data BSO 615 C SIPMOS ® Small-Signal-Transistor Features Dual N- and P -Channel Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current N P -60 0.3 -2 V Ω A VDS RDS(on) ID 60 0.11 3.1 Enhancement mode Logic Level Avalanche rated dv/dt rated Type BSO 615 C Package SO 8 Ordering Code Q67041-S4024 Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol N Continuous drain current Value P Unit A ID 3.1 2.5 -2 -1.6 -8 T A = 25 °C T A = 70 °C Pulsed drain current I D puls EAS 12.4 T A = 25 °C Avalanche energy, single pulse mJ 47 70 0.2 kV/µs 6 6 ±20 2 V W °C I D = 3.1 A , VDD = 25 V, R GS = 25 Ω I D = -2 A , VDD = -25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt, T jmax = 150 °C EAR dv/dt 0.2 I S = 3.1 A, V DS = 48 V, di/dt = 200 A/µs I S = -2 A, V DS = -48 V, di/dt = -200 A/µs Gate source voltage Power dissipation VGS Ptot T j , T stg ±20 2 T A = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 -55...+150 55/150/56 Page 1 1999-10-28 Preliminary data Termal Characteristics Parameter Dynamic Characteristics Thermal resistance, junction - soldering point ( Pin 4) SMD version, device on PCB: @ min. footprint; t ≤ 10 sec. @ 6 cm 2 cooling area 1) ; t ≤ 10 sec. @ min. footprint; t ≤ 10 sec. @ 6 cm 2 cooling area 1) ; t ≤ 10 sec. N N P P N RthJS P Symbol min. BSO 615 C Values typ. max. 40 40 100 62.5 110 62.5 Unit K/...