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TE28F256J3F105 Dataheets PDF



Part Number TE28F256J3F105
Manufacturers Numonyx
Logo Numonyx
Description 256-Mbit StrataFlash Embedded Memory
Datasheet TE28F256J3F105 DatasheetTE28F256J3F105 Datasheet (PDF)

Numonyx™ StrataFlash® Embedded Memory (J3-65nm) 256-Mbit Datasheet Product Features „ Architecture — Multi-Level Cell Technology: Highest Density at Lowest Cost — 256 symmetrically-sized blocks of 128 Kbytes „ Performance — 95 ns initial access time for Easy BGA — 105 ns initial accsss time for TSOP — 25 ns 16-word Asynchronous page-mode reads — 512-Word Buffer Programming at 1.46MByte/s (Typ) „ Voltage and Power — VCC (Core) = 2.7 V to 3.6 V — VCCQ (I/O) = 2.7 V to 3.6 V — Standby Current: 65 .

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Numonyx™ StrataFlash® Embedded Memory (J3-65nm) 256-Mbit Datasheet Product Features „ Architecture — Multi-Level Cell Technology: Highest Density at Lowest Cost — 256 symmetrically-sized blocks of 128 Kbytes „ Performance — 95 ns initial access time for Easy BGA — 105 ns initial accsss time for TSOP — 25 ns 16-word Asynchronous page-mode reads — 512-Word Buffer Programming at 1.46MByte/s (Typ) „ Voltage and Power — VCC (Core) = 2.7 V to 3.6 V — VCCQ (I/O) = 2.7 V to 3.6 V — Standby Current: 65 µA (Typ) — Erase & Program Current: 35 mA (Typ) — Page Read: 12 mA (Typ) „ Quality and Reliability — Operating temperature: -40 °C to +85 °C — 100K Minimum erase cycles per block — 65 nm NumonyxTM ETOX™ X Process technology „ Security — Enhanced security options for code protection — Absolute protection with VPEN = GND — Individual block locking — Block erase/program lockout during power transition — Password Access feature — One-Time Program.


SB10200FCT TE28F256J3F105 JS28F256J3F105


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