256-Mbit StrataFlash Embedded Memory
Numonyx™ StrataFlash® Embedded Memory (J3-65nm)
256-Mbit
Datasheet
Product Features
Architecture
— Multi-Level Cell T...
Description
Numonyx™ StrataFlash® Embedded Memory (J3-65nm)
256-Mbit
Datasheet
Product Features
Architecture
— Multi-Level Cell Technology: Highest Density at Lowest Cost
— 256 symmetrically-sized blocks of 128 Kbytes
Performance
— 95 ns initial access time for Easy BGA
— 105 ns initial accsss time for TSOP
— 25 ns 16-word Asynchronous page-mode reads
— 512-Word Buffer Programming at 1.46MByte/s (Typ)
Voltage and Power
— VCC (Core) = 2.7 V to 3.6 V — VCCQ (I/O) = 2.7 V to 3.6 V — Standby Current: 65 µA (Typ)
— Erase & Program Current: 35 mA (Typ)
— Page Read: 12 mA (Typ)
Quality and Reliability
— Operating temperature: -40 °C to +85 °C
— 100K Minimum erase cycles per block — 65 nm NumonyxTM ETOX™ X Process
technology
Security
— Enhanced security options for code protection
— Absolute protection with VPEN = GND — Individual block locking
— Block erase/program lockout during power transition
— Password Access feature
— One-Time Program...
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