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MT28FW01GABA1HPC-0AAT Dataheets PDF



Part Number MT28FW01GABA1HPC-0AAT
Manufacturers Micron Technology
Logo Micron Technology
Description Parallel NOR Flash Automotive Memory
Datasheet MT28FW01GABA1HPC-0AAT DatasheetMT28FW01GABA1HPC-0AAT Datasheet (PDF)

1Gb: x16, 3V, MT28FW, Automotive Parallel NOR Features Parallel NOR Flash Automotive Memory MT28FW01GABA1xPC-0AAT, MT28FW01GABA1xJS-0AAT Features • Single-level cell (SLC) process technology • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65 - VCC (I/O buffers) • Asynchronous random/page read – Page size: 16 words – Page access: 20ns (VCC = VCCQ = 2.7-3.6V) – Random access: 105ns (VCC = VCCQ = 2.7-3.6V) – Random access: 110ns (VCCQ = 1.65-VCC) • Buffer program (512-word prog.

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1Gb: x16, 3V, MT28FW, Automotive Parallel NOR Features Parallel NOR Flash Automotive Memory MT28FW01GABA1xPC-0AAT, MT28FW01GABA1xJS-0AAT Features • Single-level cell (SLC) process technology • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65 - VCC (I/O buffers) • Asynchronous random/page read – Page size: 16 words – Page access: 20ns (VCC = VCCQ = 2.7-3.6V) – Random access: 105ns (VCC = VCCQ = 2.7-3.6V) – Random access: 110ns (VCCQ = 1.65-VCC) • Buffer program (512-word program buffer) – 2.0 MB/s (TYP) when using full buffer program – 2.5 MB/s (TYP) when using accelerated buffer program (VHH) • Word program: 25us per word (TYP) • Block erase (128KB): 0.2s (TYP) • Memory organization – Uniform blocks: 128KB or 64KW each – x16 data bus • Program/erase suspend and resume capability – Read from another block during a PROGRAM SUSPEND operation – Read or program another block during an ERASE SUSPEND operation • Unlock bypass, b.


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