MT28EW256ABA

256Mb: x8/x16, 3V, MT28EW Embedded Parallel NOR Features Parallel NOR Flash Embedded Memory MT28EW256ABA Features Single-level cell (SLC) process technology Density: 256Mb Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65 - VCC (I/O buffers) Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 20ns – Random access: 70ns (VCC = VCCQ = 2.7-3.6V) – Random access: 75ns (VCCQ = 1.65-VCC) Buffer program (512-word program buffer) – 2.0 MB/s (TYP) when using full buffer program – 2.5 MB/s (TYP) when using accelerated buffer program (VHH) Word/Byte program: 25us per word (TYP) Block erase (128KB): 0.2s (TYP) Memory organization – Uniform blocks: 128KB or 64KW each – x8/x16 data bus Program/erase suspend and resume capability – Read from another block during a PROGRAM SUSPEND operation – Read or program another block during an ERASE SUSPEND operation Unlock bypass, block erase, chip er...