Parallel NOR Flash Embedded Memory
128Mb: x8/x16, 3V, MT28EW Embedded Parallel NOR Features
Parallel NOR Flash Embedded Memory
MT28EW128ABA
Features
• Sin...
Description
128Mb: x8/x16, 3V, MT28EW Embedded Parallel NOR Features
Parallel NOR Flash Embedded Memory
MT28EW128ABA
Features
Single-level cell (SLC) process technology Density: 128Mb Supply voltage
– VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65 - VCC (I/O buffers) Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 20ns – Random access: 70ns (VCC = VCCQ = 2.7-3.6V) – Random access: 75ns (VCCQ = 1.65-VCC) Buffer program (512-word program buffer) – 2.0 MB/s (TYP) when using full buffer program – 2.5 MB/s (TYP) when using accelerated buffer
program (VHH) Word/Byte program: 25us per word (TYP) Block erase (128KB): 0.2s (TYP) Memory organization
– Uniform blocks: 128KB or 64KW each – x8/x16 data bus Program/erase suspend and resume capability – Read from another block during a PROGRAM
SUSPEND operation – Read or program another block during an ERASE
SUSPEND operation Unlock bypass, block erase, chip erase, and write to
buffer capability
BLANK CHECK operation to verify an erased block CYCLIC REDUNDANCY CHECK (CRC) operation to
verify a program pattern VPP/WP# protection
– Protects first or last block regardless of block protection settings
Software protection – Volatile protection – Nonvolatile protection – Password protection
Extended memory block – 128-word (256-byte) block for permanent, secure identification – Programmed or locked at the factory or by the customer
JESD47-compliant – 100,000 (minimum) ERASE cycles per bloc...
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