DatasheetsPDF.com

MT28EW01GABA Dataheets PDF



Part Number MT28EW01GABA
Manufacturers Micron Technology
Logo Micron Technology
Description Parallel NOR Flash Embedded Memory
Datasheet MT28EW01GABA DatasheetMT28EW01GABA Datasheet (PDF)

1Gb: x8/x16, 3V, MT28EW Embedded Parallel NOR Features Parallel NOR Flash Embedded Memory MT28EW01GABA Features • Single-level cell (SLC) process technology • Density: 1Gb • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65 - VCC (I/O buffers) • Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 20ns – Random access: 95ns (VCC = VCCQ = 2.7-3.6V) – Random access: 100ns (VCCQ = 1.65-VCC) • Buffer program (512-word program buffer) – 2.0 MB/s (TYP) whe.

  MT28EW01GABA   MT28EW01GABA


Document
1Gb: x8/x16, 3V, MT28EW Embedded Parallel NOR Features Parallel NOR Flash Embedded Memory MT28EW01GABA Features • Single-level cell (SLC) process technology • Density: 1Gb • Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VCCQ = 1.65 - VCC (I/O buffers) • Asynchronous random/page read – Page size: 16 words or 32 bytes – Page access: 20ns – Random access: 95ns (VCC = VCCQ = 2.7-3.6V) – Random access: 100ns (VCCQ = 1.65-VCC) • Buffer program (512-word program buffer) – 2.0 MB/s (TYP) when using full buffer program – 2.5 MB/s (TYP) when using accelerated buffer program (VHH) • Word/Byte program: 25us per word (TYP) • Block erase (128KB): 0.2s (TYP) • Memory organization – Uniform blocks: 128KB or 64KW each – x8/x16 data bus • Program/erase suspend and resume capability – Read from another block during a PROGRAM SUSPEND operation – Read or program another block during an ERASE SUSPEND operation • Unlock bypass, block erase, chip erase.


MT28EW128ABA MT28EW01GABA S1880


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)