BSP125

Rev. 1.0 BSP125 SIPMOS® Power-Transistor Feature N-Channel Enhancement mode Logic Level dv/dt rated Product Summary VDS RDS(on) ID 600 45 0.12 SOT-223 V Ω A Type BSP125 Package SOT-223 Ordering Code Q62702-S654 Tape and Reel Information E6327: 3000 pcs/reel Marking BSP125 Maximum Ratings, at T j = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current TA=25°C TA=70°C Value 0.12 0.1 Unit A ID Pulsed drain current TA=25°C ID puls dv/dt VGS Ptot Tj , Tstg 0.48 6 ±20 Class 1 1.8 -55... +150 55/150/56 W °C kV/µs V Reverse diode dv/dt IS=0.12A, VDS =480V, di/dt=200A/µs, T jmax=175°C Gate source voltage ESD Sensitivity (HBM) as per MIL-STD 883 Power dissipation TA=25°C, T A=25 Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-02-26 Rev. 1.0 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSP125 Symbol min. RthJS RthJA - Values typ. max. 25 Unit K/W - 115 70 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS=0, ID=0.25mA Symbol min. V(BR)DSS VGS(th) I DSS I GSS RDS(on) RDS(on) 600 1.3 Values typ. 1.9 max. 2.3 Unit V Gate threshold voltage, V GS = VDS ID=94µA Zero gate voltage drain current VDS=600V, VGS=0, Tj =25°C VDS=600V, VGS=0, Tj =125°C µA 10 26 25 0.1 5 100 60 45 nA Ω Gat...