BSP130

DISCRETE SEMICONDUCTORS DATA SHEET BSP130 N-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a SOT223 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transformer drivers. PINNING - SOT223 PIN 1 2 3 4 gate drain source drain 1 Top view 2 3 MAM054 BSP130 QUICK REFERENCE DATA SYMBOL VDS ID Ptot ±VGSO RDS(on) VGS(off) PARAMETER drain-source voltage DC drain current total power dissipation drain-source on-resistance gate-source cut-off voltage CONDITIONS MIN. − − up to Tamb = 25 °C − − − 0.8 MAX. 300 300 1.5 20 8 2 UNIT V mA W V Ω V gate-source voltage open drain ID = 250 mA; VGS = 10 V ID = 1 mA; VDS = VGS DESCRIPTION handbook, halfpage 4 d g s Marking code BSP130. Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS ±VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current peak drain current total power dissipation storage temperatu...