BSP135

SIPMOS® Small-Signal Transistor BSP 135 q q q q q q q VDS 600 V ID 0.100 A RDS(on) 60 Ω N channel Depletion mode High dynamic resistance Available grouped in VGS(th) Type Ordering Code Tape and Reel Information Pin Configuration Marking Package 1 G 2 D 3 S 4 D BSP 135 SOT-223 BSP 135 Q62702-S655 E6327: 1000 pcs/reel BSP 135 Q67000-S283 E6906: 1000 pcs/reel VGS(th) selected in groups: (see page 219) Maximum Ratings Parameter Drain-source voltage Drain-gate voltage, RGS = 20 kΩ Gate-source voltage Gate-source peak voltage, aperiodic Continuous drain current, TA = 44 ˚C Pulsed drain current, Max. power dissipation, Symbol Values 600 600 ± 14 ± 20 0.100 0.30 1.7 – 55 … + 150 72 12 E 55/150/56 Unit V VDS VDGR VGS Vgs ID ID puls Ptot Tj, Tstg RthJA RthJS – – A W ˚C K/W – TA = 25 ˚C TA = 25 ˚C Operating and storage temperature range Thermal resistance 1) chip-ambient chip-soldering point RthJS DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for drain connection. Semiconductor Group 1 09.96 BSP 135 Electrical Characteristics at Tj = 25 ˚C, unless otherwise specified. Parameter Symbol min. Static Characteristics Drain-source breakdown voltage VGS = − 3 V, ID = 0.25 mA Gate threshold voltage VDS = 3 V, ID = 1 mA Drain-source cutoff current VDS = 600 V, VGS = − 3 V Tj = 25 ˚C Tj = 125 ˚C Gate-source leakage current VGS = 20 V, VDS = 0 Drain-source on-resistance VGS = 0 V, I...