Document
CGB241
Data Sheet
2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Description:
The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1, or IEEE 802.11b). Its high power added efficiency (typically 50%) and single positive supply operation makes the device ideally suited to handheld applications. The device delivers 22.5 dBm output power at a supply voltage of 3.2 V, with an overall PAE of 50%. The output power can be adjusted using an analog control voltage (VCTR). Simple external input-, interstage-, and output matching circuits are used to adapt to the different requirements of linearity and harmonic suppression in various applications.
Features:
• 2-stage Bluetooth InGaP HBT power amplifier
• Single voltage supply
• Wide operating voltage range 2.0 - 5.5 V
• POUT = 22.5 dBm at VC = 3.2 V
• Overall power added efficiency ( PAE ) typically 50%
• Analog power control with four power steps
• High PAE at low–power mode
• High harmonic suppression typ. 35 dBc
• Easy external matching concept • Thin Small Leadless Package (A = 2.6mm2)
Applications:
• Bluetooth Class 1 • Home RF • Cordless Phones • IEEE 802.11b • ISM-band Spread
Spectrum
Package Outline:
Pin Configuration: 1: Vc1 2: RFin 3: NC 4: Vcntrl1 5: Vcntrl2 6: Vc2 7 (paddle): GND
For further information please visit www.triquint.com Rev. A; November 14th, 2005.
pg. 1/14
CGB241
Data Sheet
2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Absolute Maximum Ratings
Parameter
Symbol
Limit Values
Unit
min.
max.
Max. Supply Voltage
VCC,MAX 0 5.5 V
Max. Control Voltage
VCTR,MAX
0
3.2 V
Max. Current Stage 1
IC1,MAX
0 40 mA
Max. Current Stage 2 Max. Total Power Dissipation 1) Max. RF Input Power 2) Channel Temperature 1)
IC2,MAX PTOT PIN,MAX TCh
0 160 mA 0.5 W +10 dBm 150 °C
Storage Temperature
TStg - 55 150 °C
1) Thermal resistance between junction and pad 7 ( = heatsink ): RTHCH = 100 K/W. 2) No RF input signal should be applied at turn on of DC Power. An output VSWR of 1:1 is assumed.
Typical Electrical Characteristics in CGB241 Reference Design
TA = 25 °C; VCC = 3.2 V; f = 2.4 ... 2.5 GHz; ZIN = ZOUT = 50 Ohms
Parameter
Symbol
Limit Values Unit Test Conditions
min typ max
Supply Current Small-Signal Operation
Power Gain Small-Signal Operation
Output Power Power Step 1
Supply Current Power Step 1
Power Added Efficiency Power Step 1
Output Power Power Step 2
Supply Current Power Step 2
Power Added Efficiency Power Step 2
ICC,SS GSS POUT,1 ICC,1 PAE 1 POUT,2 ICC,2 PAE 2
120 150 mA
PIN = - 10 dBm VCTR = 2.5 V
24 26
dB PIN = - 10 dBm VCTR = 2.5 V
3 dBm PIN = + 3 dBm VCTR = 1.15 V
15 mA PIN = + 3 dBm VCTR = 1.15 V
7 % PIN = + 3 dBm VCTR = 1.15 V
12 dBm PIN = + 3 dBm VCTR = 1.3 V
30 mA PIN = + 3 dBm VCTR = 1.3 V
15 % PIN = + 3 dBm VCTR = 1.3 V
For further information please visit www.triquint.com Rev. A; November 14th, 2005.
pg. 2/14
CGB241
Data Sheet
2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Electrical Characteristics in CGB241 Reference Design (cont.)
Parameter
Output Power Power Step 3
Supply Current Power Step 3
Power Added Efficiency Power Step 3
Output Power Power Step 4
Supply Current Power Step 4
Power Added Efficiency Power Step 4 2nd Harm. Suppression Power Step 4
Turn-Off Current
Symbol POUT,3
Limit Values Unit Min typ max
17 dBm
ICC,3
52 mA
PAE 3
30 %
POUT,4
22.0 22.5
dBm
ICC,4
130 170 mA
PAE 4
40 50
-%
h2 - 35 -10 dBc
ICC,OFF
0.5 uA
Off-State Isolation
S21,0
Stable Load VSWR (no oscillation for any phase of load)
VSWR
Maximum Load VSWR (no damage to device) allowed for 10s RF must not be applied before DC is turned on !
VSWR
26 dB 6
6
Test Conditions
PIN = + 3 dBm VCTR = 1.5 V
PIN = + 3 dBm VCTR = 1.5 V
PIN = + 3 dBm VCTR = 1.5 V
PIN = + 3 dBm VCTR = 2.5 V
PIN = + 3 dBm VCTR = 2.5 V
PIN = + 3 dBm VCTR = 2.5 V
PIN = + 3 dBm VCTR = 2.5 V
VCC = n/c VCTR < -2.0 V No RF Input
PIN = + 3 dBm VCTR = 0 V
PIN = + 3 dBm VCC = 3.2 V VCTR = 2.5 V ZIN = 50 Ohms
PIN = + 5 dBm VCC = 4.8 V VCTR = 2.5 V ZIN = 50 Ohms
For further information please visit www.triquint.com Rev. A; November 14th, 2005.
pg. 3/14
CGB241
Data Sheet
2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Typical Device Performance
PAE versus Vcc
Vcntrl: 2.5V; Pin: +3 dBm @ 2.45 GHz
55 50 45 40 35 30 25 20
2 2.5 3 3.5 4 4.5 5
Vcc (V)
Pout versus Vcc Vcntrl: 2.5V; Pin: +3 dBm @ 2.45 GHz
27
25
23
21
19 2 2.5 3 3.5 4 4.5 5
Vcc (V)
PAE (%)
Pout (dBm)
Icc (mA)
Pout (dBm)
Supply Current ICC = f ( VCTR )
Output Power POUT = f ( VCTR )
180 160 140 120 100
80 60 40 20
0 1
Icc vs Vctrl Pin: 2.45GHz / +3dBm
1.5 2 2.5
Vctrl (V)
Vcc :3.2V Vcc :2.8V 3
25 20 15 10
5 0
1
For further information please visit www.triquint.com Rev. A; November 14th, 2005.
Pout vs Vctrl Pin: 2.45 GHz / +3dBm
Vcc :3.2V
Vcc :2.8V
1.5 2 2.5
Vctrl(V)
3
pg. 4/14
CGB241
Data Sheet
2-Stage Bluetooth & WLAN InGaP HB.