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CGB241 Dataheets PDF



Part Number CGB241
Manufacturers TriQuint Semiconductor
Logo TriQuint Semiconductor
Description 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier
Datasheet CGB241 DatasheetCGB241 Datasheet (PDF)

CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1, or IEEE 802.11b). Its high power added efficiency (typically 50%) and single positive supply operation makes the device ideally suited to handheld applications. The device delivers 22.5 dBm output power at a supply voltage of 3.2 V, with an overall PAE of 50%. The outp.

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CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Description: The CGB241 GaAs Power Amplifier MMIC has been especially developed for wireless applications in the 2.4 - 2.5 GHz ISM band (e.g. Bluetooth class 1, or IEEE 802.11b). Its high power added efficiency (typically 50%) and single positive supply operation makes the device ideally suited to handheld applications. The device delivers 22.5 dBm output power at a supply voltage of 3.2 V, with an overall PAE of 50%. The output power can be adjusted using an analog control voltage (VCTR). Simple external input-, interstage-, and output matching circuits are used to adapt to the different requirements of linearity and harmonic suppression in various applications. Features: • 2-stage Bluetooth InGaP HBT power amplifier • Single voltage supply • Wide operating voltage range 2.0 - 5.5 V • POUT = 22.5 dBm at VC = 3.2 V • Overall power added efficiency ( PAE ) typically 50% • Analog power control with four power steps • High PAE at low–power mode • High harmonic suppression typ. 35 dBc • Easy external matching concept • Thin Small Leadless Package (A = 2.6mm2) Applications: • Bluetooth Class 1 • Home RF • Cordless Phones • IEEE 802.11b • ISM-band Spread Spectrum Package Outline: Pin Configuration: 1: Vc1 2: RFin 3: NC 4: Vcntrl1 5: Vcntrl2 6: Vc2 7 (paddle): GND For further information please visit www.triquint.com Rev. A; November 14th, 2005. pg. 1/14 CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Absolute Maximum Ratings Parameter Symbol Limit Values Unit min. max. Max. Supply Voltage VCC,MAX 0 5.5 V Max. Control Voltage VCTR,MAX 0 3.2 V Max. Current Stage 1 IC1,MAX 0 40 mA Max. Current Stage 2 Max. Total Power Dissipation 1) Max. RF Input Power 2) Channel Temperature 1) IC2,MAX PTOT PIN,MAX TCh 0 160 mA 0.5 W +10 dBm 150 °C Storage Temperature TStg - 55 150 °C 1) Thermal resistance between junction and pad 7 ( = heatsink ): RTHCH = 100 K/W. 2) No RF input signal should be applied at turn on of DC Power. An output VSWR of 1:1 is assumed. Typical Electrical Characteristics in CGB241 Reference Design TA = 25 °C; VCC = 3.2 V; f = 2.4 ... 2.5 GHz; ZIN = ZOUT = 50 Ohms Parameter Symbol Limit Values Unit Test Conditions min typ max Supply Current Small-Signal Operation Power Gain Small-Signal Operation Output Power Power Step 1 Supply Current Power Step 1 Power Added Efficiency Power Step 1 Output Power Power Step 2 Supply Current Power Step 2 Power Added Efficiency Power Step 2 ICC,SS GSS POUT,1 ICC,1 PAE 1 POUT,2 ICC,2 PAE 2 120 150 mA PIN = - 10 dBm VCTR = 2.5 V 24 26 dB PIN = - 10 dBm VCTR = 2.5 V 3 dBm PIN = + 3 dBm VCTR = 1.15 V 15 mA PIN = + 3 dBm VCTR = 1.15 V 7 % PIN = + 3 dBm VCTR = 1.15 V 12 dBm PIN = + 3 dBm VCTR = 1.3 V 30 mA PIN = + 3 dBm VCTR = 1.3 V 15 % PIN = + 3 dBm VCTR = 1.3 V For further information please visit www.triquint.com Rev. A; November 14th, 2005. pg. 2/14 CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Electrical Characteristics in CGB241 Reference Design (cont.) Parameter Output Power Power Step 3 Supply Current Power Step 3 Power Added Efficiency Power Step 3 Output Power Power Step 4 Supply Current Power Step 4 Power Added Efficiency Power Step 4 2nd Harm. Suppression Power Step 4 Turn-Off Current Symbol POUT,3 Limit Values Unit Min typ max 17 dBm ICC,3 52 mA PAE 3 30 % POUT,4 22.0 22.5 dBm ICC,4 130 170 mA PAE 4 40 50 -% h2 - 35 -10 dBc ICC,OFF 0.5 uA Off-State Isolation S21,0 Stable Load VSWR (no oscillation for any phase of load) VSWR Maximum Load VSWR (no damage to device) allowed for 10s RF must not be applied before DC is turned on ! VSWR 26 dB 6 6 Test Conditions PIN = + 3 dBm VCTR = 1.5 V PIN = + 3 dBm VCTR = 1.5 V PIN = + 3 dBm VCTR = 1.5 V PIN = + 3 dBm VCTR = 2.5 V PIN = + 3 dBm VCTR = 2.5 V PIN = + 3 dBm VCTR = 2.5 V PIN = + 3 dBm VCTR = 2.5 V VCC = n/c VCTR < -2.0 V No RF Input PIN = + 3 dBm VCTR = 0 V PIN = + 3 dBm VCC = 3.2 V VCTR = 2.5 V ZIN = 50 Ohms PIN = + 5 dBm VCC = 4.8 V VCTR = 2.5 V ZIN = 50 Ohms For further information please visit www.triquint.com Rev. A; November 14th, 2005. pg. 3/14 CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HBT Power Amplifier Typical Device Performance PAE versus Vcc Vcntrl: 2.5V; Pin: +3 dBm @ 2.45 GHz 55 50 45 40 35 30 25 20 2 2.5 3 3.5 4 4.5 5 Vcc (V) Pout versus Vcc Vcntrl: 2.5V; Pin: +3 dBm @ 2.45 GHz 27 25 23 21 19 2 2.5 3 3.5 4 4.5 5 Vcc (V) PAE (%) Pout (dBm) Icc (mA) Pout (dBm) Supply Current ICC = f ( VCTR ) Output Power POUT = f ( VCTR ) 180 160 140 120 100 80 60 40 20 0 1 Icc vs Vctrl Pin: 2.45GHz / +3dBm 1.5 2 2.5 Vctrl (V) Vcc :3.2V Vcc :2.8V 3 25 20 15 10 5 0 1 For further information please visit www.triquint.com Rev. A; November 14th, 2005. Pout vs Vctrl Pin: 2.45 GHz / +3dBm Vcc :3.2V Vcc :2.8V 1.5 2 2.5 Vctrl(V) 3 pg. 4/14 CGB241 Data Sheet 2-Stage Bluetooth & WLAN InGaP HB.


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