BSP16

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BSP16 PNP high-voltage transistor Product specification Supersedes data of 1998 Aug 04 1999 Apr 28 Philips Semiconductors Product specification PNP high-voltage transistor FEATURES High voltage (max. 350 V). APPLICATIONS Switching and amplification Especially used in telephony and automotive applications. handbook, halfpage BSP16 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 4 DESCRIPTION PNP high-voltage transistor in a SOT223 plastic package. NPN complements: BSP19 and BSP20. 1 Top view 2 3 MAM288 2, 4 1 3 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO VCEO VEBO IC IB Ptot Tstg Tj Tamb Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 CONDITIONS open emitter open base open collector − − − − − − −65 − −65 MIN. MAX. −350 −300 −6 −200 −200 1.28 +150 150 +150 V V V mA mA W °C °C °C UNIT 1999 Apr 28 2 Philips Semiconductors Product specification PNP high-voltage transistor THERMAL CHARACTERIST...