BSP170

BSP 170 SIPMOS ® Small-Signal Transistor P channel Enhancement mode Avalanche rated VGS(th) = -2.1...-4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type BSP 170 Type BSP 170 VDS -60 V ID -1.7 A RDS(on) 0.35 Ω Package SOT-223 Marking Ordering Code Q67000-S . . . Tape and Reel Information E6327 Maximum Ratings Parameter Continuous drain current Symbol Values -1.7 Unit A ID IDpuls -6.8 TA = 25 °C DC drain current, pulsed TA = 25 °C Avalanche energy, single pulse EAS 8 mJ ID = -1.7 A, VDD = -25 V, RGS = 25 Ω L = 3.23 mH, Tj = 25 °C Gate source voltage Power dissipation VGS Ptot ± 20 1.8 V W TA = 25 °C Semiconductor Group 1 22/05/1997 BSP 170 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 70 ≤ 10 55 / 150 / 56 K/W Unit °C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -60 -3 -0.1 -10 -10 0.255 -4 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -2.1 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS -1 -100 µA VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C Ga...