BSP 170 P
Preliminary data SIPMOS® Power Transistor • P-Channel
• Enhancement
mode
• Avalanche rated • dv/dt rated Pin...
BSP 170 P
Preliminary data SIPMOS® Power
Transistor P-Channel
Enhancement
mode
Avalanche rated dv/dt rated Pin 1 G Type BSP 170 P VDS 60 V ID RDS(on) Package @ VGS VGS = -10 V SOT-223 Maximum Ratings , at Tj = 25°C, unless otherwise specified Parameter Continuous drain current TA = 25 °C TA = 70 °C Pulsed drain current TA = 25 °C Avalanche energy, single pulse ID = -1.9 A, VDD = -25 V, RGS = 25 Ω Avalanche current,periodic limited by Tjmax Avalanche energy,periodic limited by Tj(max) Reverse diode dv/dt IS = -1.9 A, VDD ≤V(BR)DSS, di/dt = 200 A/µs, Tjmax = 150 °C Gate source voltage Power dissipation TA = 25 °C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj Tstg ±20 1.8 -55 ... +150 -55...+150 55/150/56 V W °C EAS IAR EAR dv/dt 70 -1.9 0.18 6 mJ A mJ kV/µs IDpulse Symbol ID -1.9 -1.5 -7.6 Value Unit A Pin 2/4 D Pin 3 S
Ordering Code Q67041-S4018
-1.9 A 0.3 Ω
Semiconductor Group
1
07 / 1998
BSP 170 P
Preliminary data Electrical Characteristics Parameter at Tj = 25 °C, unless otherwise specified Thermal Characteristics Thermal resistance, junction -soldering point (Pin 4 ) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area1) RthJS RthJA tbd 70 Symbol min. Values typ. max. tbd K/W Unit
Static Characteristics Drain- source breakdown voltage VGS = 0 V, ID = -0.25 mA Gate threshold voltage, VGS = VDS ID = -460 µA Zero gate voltage drain current VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = ...