BSP20

DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D087 BSP19; BSP20 NPN high-voltage transistors Product specification Supersedes data of 1997 Mar 03 1999 Jun 01 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES Low current (max. 100 mA) High voltage (max. 350 V). APPLICATIONS Switching and amplification Especially used in telephony and automotive applications. DESCRIPTION handbook, halfpage BSP19; BSP20 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 4 2, 4 1 NPN transistor in a SOT223 plastic package. PNP complement: BSP16. 1 Top view 2 3 MAM287 3 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSP19 BSP20 VCEO collector-emitter voltage BSP19 BSP20 VEBO IC IB Ptot Tstg Tj Tamb Note 1. Device mounted on printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) base current (DC) total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − −65 − −65 350 250 5 100 100 1.2 +150 150 +150 V V V mA mA W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 400 300 V V MIN. MAX. UNIT 1999 Jun 01 2 Philips Semiconductors Product specific...