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BSP30 Dataheets PDF



Part Number BSP30
Manufacturers Diotec Semiconductor
Logo Diotec Semiconductor
Description Surface mount Si-Epitaxial PlanarTransistors
Datasheet BSP30 DatasheetBSP30 Datasheet (PDF)

BSP 30 ... BSP 33 PNP Switching Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 1.65 4 ±0.2 ±0.3 6.5 ±0.1 3 ±0.2 1.3 W SOT-223 0.04 g Plastic case Kunststoffgehäuse 3.5 Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1 0.7 2.3 2 3 3.25 Dime.

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BSP 30 ... BSP 33 PNP Switching Transistors PNP Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage Power dissipation – Verlustleistung 1.65 4 ±0.2 ±0.3 6.5 ±0.1 3 ±0.2 1.3 W SOT-223 0.04 g Plastic case Kunststoffgehäuse 3.5 Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle 1 0.7 2.3 2 3 3.25 Dimensions / Maße in mm 1 = B 2, 4 = C 3 = E Maximum ratings (TA = 25/C) 7 Grenzwerte (TA = 25/C) BSP 30 BSP 31 BSP 32 BSP 33 80 V 90 V 5V 1.3 W 1) 1A 2A 200 mA 150/C - 65…+ 150/C Kennwerte (Tj = 25/C) Min. Typ. – – – – – Max. 100 nA 50 :A 100 nA 250 mV 500 mV Collector-Emitter-voltage Collector-Base-voltage Emitter-Base-voltage Power dissipation – Verlustleistung Collector current – Kollektorstrom (dc) B open E open C open - VCE0 - VCB0 - VEB0 Ptot - IC - ICM - IBM Tj TS 60 V 70 V Peak Collector current – Koll.-Spitzenstrom Peak Base current – Basis-Spitzenstrom Junction temp. – Sperrschichttemperatur Storage temperature – Lagerungstemperatur Characteristics (Tj = 25/C) Collector-Base cutoff current – Kollektorreststrom IE = 0, - VCB = 60 V IE = 0, - VCB = 60 V, Tj = 150/C Emitter-Base cutoff current – Emitterreststrom IC = 0, - VEB = 5 V - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA - IEB0 - VCEsat - VCEsat – – – Collector saturation volt. – Kollektor-Sättigungsspg. 2) - ICB0 - ICB0 – – 1 ) Mounted on P.C. board with 3 mm2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 2 ) Tested with pulses tp = 300 :s, duty cycle # 2% – Gemessen mit Impulsen tp = 300 :s, Schaltverhältnis # 2% 2 01.11.2003 Switching Transistors Characteristics (Tj = 25/C) Min. Base saturation voltage – Basis-Sättigungsspannung 1) - IC = 150 mA, - IB = 15 mA - IC = 500 mA, - IB = 50 mA - VCE = 5 V, - IC = 100 :A - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 500 mA - VCE = 5 V, - IC = 100 :A - VCE = 5 V, - IC = 100 mA - VCE = 5 V, - IC = 500 mA - VBEsat - VBEsat hFE hFE hFE hFE hFE hFE fT CCB0 CEB0 ton toff – – 10 40 30 30 100 50 100 MHz – – – – RthA RthS BSP 30 ... BSP 33 Kennwerte (Tj = 25/C) Typ. – – – – – – – – – 20 pF 120 pF – – Max. 1V 1.2 V – 120 – – 300 – – – – 500 ns 600 ns 93 K/W 2) 12 K/W DC current gain – Kollektor-Basis-Stromverhältnis 1) BSP 30 BSP 32 BSP 31 BSP 33 Gain-Bandwidth Product – Transitfrequenz - VCE = 5 V, - IC = 10 mA, f = 100 MHz - VCB = 10 V, IE = ie = 0, f = 1 MHz - VEB = 0.5 V, IC = ic = 0, f = 1 MHz Switching times – Schaltzeiten turn-on time turn-off time - ICon = 100 mA, - IBon = 5 mA, IBoff = 5 mA Collector-Base Capacitance – Kollektor-Basis-Kapazität Emitter-Base Capacitance – Emitter-Basis-Kapazität Thermal resistance – Wärmewiderstand junction to ambient air – Sperrschicht zu umgebender Luft junction to soldering point – Sperrschicht zu Lötpad Recommended complementary NPN t.


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