Document
BSP 300
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • VGS(th)= 2.0... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D
Type BSP 300 Type BSP 300 BSP 300
VDS
800 V
ID
0.19 A
RDS(on)
20 Ω
Package SOT-223
Marking BSP 300
Ordering Code Q67050 -T0009 Q67050-T0017
Tape and Reel Information E6433 E6327
Maximum Ratings Parameter Continuous drain current Symbol Values 0.19 Unit A
ID IDpuls
0.76
TA = 25 °C
DC drain current, pulsed
TA = 25 °C
Avalanche energy, single pulse
EAS
36
mJ
ID = 0.8 A, VDD = 50 V, RGS = 25 Ω L = 105 mH, Tj = 25 °C
Gate source voltage Power dissipation
VGS Ptot
± 20 1.8
V W
TA = 25 °C
Semiconductor Group
1
02/12/1996
BSP 300
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 70 ≤ 14 E 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA RthJS
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit
V(BR)DSS
800 3 0.1 10 10 15 4
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS(th)
2
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
IDSS
1 100
µA
VDS = 800 V, VGS = 0 V, Tj = 25 °C VDS = 800 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
100
nA Ω 20
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
RDS(on)
VGS = 10 V, ID = 0.19 A
Semiconductor Group
2
02/12/1996
BSP 300
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit
gfs
0.06 0.27 170 20 10 -
S pF 230 30 15 ns 7 11
VDS≥ 2 * ID * RDS(on)max, ID = 0.19 A
Input capacitance
Ciss Coss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
td(on)
VDD = 30 V, VGS = 10 V, ID = 0.25 A RGS = 50 Ω
Rise time
tr
16 24
VDD = 30 V, VGS = 10 V, ID = 0.25 A RGS = 50 Ω
Turn-off delay time
td(off)
27 36
VDD = 30 V, VGS = 10 V, ID = 0.25 A RGS = 50 Ω
Fall time
tf
21 28
VDD = 30 V, VGS = 10 V, ID = 0.25 A RGS = 50 Ω
Semiconductor Group
3
02/12/1996
BSP 300
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 °C Inverse diode direct current,pulsed A 1 95 0.25 0.19 0.76 V 1.4 ns µC Values typ. max. Unit
ISM VSD trr Qrr
TA = 25 °C
Inverse diode forward voltage
VGS = 0 V, IF = 0.38 A, Tj = 25 °C
Reverse recovery time
VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs
Reverse recovery charge
VR = 30 V, IF=lS = 0 , diF/dt = 100 A/µs
Semiconductor Group
4
02/12/1996
BSP 300
Power dissipation Ptot = ƒ(TA)
Drain current ID = ƒ(TA) parameter: VGS ≥ 10 V
0.20 A
2.0 W
Ptot
1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 20 40 60 80 100 120 °C 160
ID
0.16 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0.00 0 20 40 60 80 100 120 °C 160
TA
TA
Safe operating area ID = ƒ(VDS) parameter: D = 0.01, TC = 25°C
10 0
D
Transient thermal impedance Zth JA = ƒ(tp) parameter: D = tp / T
t = 760.0µs p 1 ms
10 2 K/W 10 1
DS (on )
ID
10 -1
=V
DS
A
/I
10 ms
ZthJC
10 0
R
10 -1 D = 0.50 0.20 10 -2 10 -3 single pulse 10 -4 DC 10 -3 0 10
1 2 3
10 -2
0.10 0.05 0.02 0.01
10
10
V 10
10 -5 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10
VDS
tp
Semiconductor Group
5
02/12/1996
BSP 300
Typ. output characteristics ID = ƒ(VDS) parameter: tp = 80 µs , Tj = 25 °C
0.45 A
l
Typ. drain-source on-resistance RDS (on) = ƒ(ID) parameter: tp = 80 µs, Tj = 25 °C
65
Ptot = 2W
g e k h ji f d
VGS [V]
Ω
55
a b c 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0
a
b
ID
0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0 4 8 12 16 V
a
RDS (on)
50 45 40 35 30 25 20 15 10 5 0
VGS [V] =
a 4.0 4.5 b 5.0 c 5.5 d 6.0 e f 6.5 7.0 g 7.5 h i j k 8.0 9.0 10.0 20.0
c
d e f g h i j
c
b k
l
k
d e gh f i j
24
0.00 0.04 0.08 0.12 0.16 0.20 0.24 0.28 A 0.34
VDS
ID
Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 µs VDS≥ 2 x ID x RDS(on)max
1.0 A
Typ. forward transconductance gfs = f (ID) parameter: tp = 80 µs, VDS≥2 x ID x RDS(on)max
0.50 S
ID
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 0 1 2 3 4 5 6 7 8 V 10
gfs
0.40 0.35 0.30 0.25 0.20 0.15 0.10 0.05 0.00 0.0 0.1 0.2 0.3 0.4 0.5 0.6
VGS
A ID
0.8
Semiconductor Group
6
02/12/1996
BSP 300
Drain-source on-resistance RDS (on) = ƒ(Tj ) parameter: ID = 0.19 A, VGS = 10 V
50
Gate threshold voltage VGS (th) = ƒ(Tj) parameter: VGS = VDS, ID = 1 mA
4.6 V 4.0
Ω
RDS (on) 40
35 30 25 20 15
98%
VGS(th)
3.6 3.2 2.8
typ
98%
2.4
2%
2.0
typ
1.6 1.2
10 5 0 -60 -20 20 60 100 °C 160
0.8 0.4 .