BSP300

BSP 300 SIPMOS ® Small-Signal Transistor N channel Enhancement mode Avalanche rated VGS(th)= 2.0... 4.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D Type VDS 800 V ID 0.19 A RDS(on) 20 Ω Package Marking BSP 300 Type BSP 300 BSP 300 SOT-223 BSP 300 Ordering Code Q67050 -T0009 Q67050-T0017 Tape and Reel Information E6433 E6327 Maximum Ratings Parameter Symbol Values Unit Continuous drain current TA = 25 °C ID A 0.19 DC drain current, pulsed TA = 25 °C IDpuls 0.76 E AS Avalanche energy, single pulse ID = 0.8 A, VDD = 50 V, RGS = 25 Ω L = 105 mH, Tj = 25 °C mJ 36 V GS P tot Gate source voltage Power dissipation TA = 25 °C ± 20 1.8 V W Semiconductor Group 1 02/12/1996 BSP 300 Maximum Ratings Parameter Symbol Values Unit Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Tj Tstg RthJA RthJS -55 ... + 150 -55 ... + 150 °C ≤ 70 ≤ 14 E 55 / 150 / 56 K/W 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit Drain- source breakdown voltage V GS = 0 V, ID = 0.25 mA, Tj = 25 °C V (BR)DSS V 800 - Gate threshold voltage V GS=V DS, ID = 1 mA V GS(th) 2 IDSS 3 4 µA Zero gate voltage drain current V DS = 800 V, V GS...