BSP31

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D087 BSP31; BSP32; BSP33 PNP medium power transistors Product specification Supersedes data of 1997 Apr 08 1999 Apr 26 Philips Semiconductors Product specification PNP medium power transistors FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Telephony and general industrial applications. DESCRIPTION PNP medium power transistor in a SOT223 plastic package. NPN complements: BSP41 and BSP43. handbook, halfpage BSP31; BSP32; BSP33 PINNING PIN 1 2, 4 3 base collector emitter DESCRIPTION 4 2, 4 1 3 1 Top view 2 3 MAM288 Fig.1 Simplified outline (SOT223) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BSP31 BSP32; BSP33 VCEO collector-emitter voltage BSP31 BSP32; BSP33 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single sided copper, tinplated, mounting pad for collector 1 cm2. For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb = 25 °C; note 1 open collector open base − − − − − − − −65 − −65 −60 −80 −5 −1 −2 −200 1.3 +150 150 +150 V V V A A mA W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − −70 −90 V V MIN. MAX. UNIT 1999 Apr 26 2...