BSP315P

BSP315P SIPMOS® Small-Signal-Transistor Features Product Summary P-Channel Enhancement mode Avalanche rated Logic Level dv/dt rated Drain source voltage Drain-Source on-state resistance Continuous drain current VDS RDS(on) ID 4 Pin 1 Pin2/4 PIN 3 Qualified according to AEC Q101 G D S Halogen­free according to IEC61249­2­21 -60 V 0.8 Ω -1.17 A 3 2 1 VPS05163 Type Package BSP315P PG-SOT223 Tape and Reel Information Marking H6327: 1000 pcs/reel BSP315P Packaging Non dry Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA = 25 °C TA = 70 °C ID A -1.17 -0.94 Pulsed drain current TA = 25 °C Avalanche energy, single pulse ID = -1.17 A , VDD = -25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt ID puls EAS EAR dv/dt -4.68 24 0.18 6 mJ kV/µs IS = -1.17 A, VDS = -48 V, di/dt = 200 A/µs, Tjmax = 150 °C Gate source voltage Power dissipation TA = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 VGS Ptot Tj , Tstg ±20 V 1.8 W -55...+150 °C 55/150/56 ESD Class; JESD22-A114-HBM Class 0 Rev.1.7 Page 1 2012-11-26 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) BSP315P Symbol Values Unit min. typ. max. RthJS RthJA - - 25 K/W K/W - - 115 - - 70 Electrical Characteristics, a...