Document
Preliminary data
BSP 317 P
SIPMOS Small-Signal-Transistor
Feature • P-Channel • Enhancement mode • Logic Level • dv/dt rated
Product Summary VDS R DS(on) ID -250 4 -0.43
SOT-223
Drain pin 2/4 Gate pin1 Source pin 3
2 1
VPS05163
V Ω A
4
3
Type
Package BSP 317 P SOT-223
Ordering Code Q67042-S4167
Tape and Reel Information -
Marking BSP317P
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current
TA=25°C TA=70°C
Symbol ID
Value -0.43 -0.34
Unit A
Pulsed drain current
TA=25°C
ID puls dv/dt VGS Ptot Tj , Tstg
-1.72 6 ±20 1.8 -55... +150 55/150/56 kV/µs V W °C
Reverse diode dv/dt
IS =-0.43A, VDS =-200V, di/dt=-200A/µs, Tjmax =150°C
Gate source voltage Power dissipation
TA=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2002-07-17
Preliminary data Thermal Characteristics Parameter Characteristics Symbol min. Values typ.
BSP 317 P
Unit max.
Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB:
@ min. footprint @ 6 cm 2 cooling area 1)
RthJS RthJA
-
15
25
K/W
-
80 48
115 70
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage
VGS =0, ID=-250µA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -250 -1
Values typ. -1.5 max. -2
Unit
V
Gate threshold voltage, VGS = VDS
ID =-370µA
Zero gate voltage drain current
VDS =-250V, VGS =0, Tj =25°C VDS =-250V, VGS =0, Tj =150°C
µA -0.1 -10 -10 3.3 3 -0.2 -100 -100 5 4 nA Ω
Gate-source leakage current
VGS =-20V, VDS =0
Drain-source on-state resistance
VGS =-4.5V, ID =-0.39A
Drain-source on-state resistance
VGS =-10V, ID =-0.43A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air.
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2002-07-17
Preliminary data
BSP 317 P
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg
VDD =-200V, ID=-0.43A, VGS =0 to -10V VDD =-200V, ID=-0.43A
Symbol
Conditions min.
Values typ. 0.76 210 30 13.4 5.7 11.1 254 67 max. 262 37 16.7 8.5 16.6 381 100
Unit
gfs Ciss Coss Crss td(on) tr td(off) tf
|VDS|≥2*|ID |*RDS(on)max , ID =-0.34A VGS =0, VDS =-25V, f=1MHz
0.38 -
S pF
VDD =-30V, VGS=-10V, ID =-0.43A, RG =6Ω
ns
-
-0.5 -4 -11.6 -2.8
-0.65 nC -5.2 -15.1 V
V(plateau) VDD =-200V, ID=-0.43A
Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr
VGS =0, IF =-0.43A VR =-125V, IF =lS , diF /dt=100A/µs
IS
TA=25°C
-
-0.84 92 210
-0.43 A -1.72 -1.2 138 315 V ns nC
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2002-07-17
Preliminary data
BSP 317 P
1 Power dissipation Ptot = f (TA )
1.9
BSP 317 P
2 Drain current ID = f (TA ) parameter: |VGS | ≥ 10V
-0.5
BSP 317 P
W
1.6
A
-0.4 1.4 -0.35
Ptot
ID
20 40 60 80 100 120
1.2 1 0.8 0.6 0.4 0.2 0 0
-0.3 -0.25 -0.2 -0.15 -0.1 -0.05 0 0
°C
160
20
40
60
80
100
120
°C
160
TA
TA
3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25°C
-10
1 BSP 317 P
4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T
10 2
BSP 317 P
K/W A
tp = 140.0µs
10 1
-10 0
D
Z thJA
/I
ID
on )
=
V
DS
1 ms
10 0
-10 -1
DS (
10 ms
10 -1 D = 0.50 0.20 10
-2
R
0.10 0.05
-10 -2 DC 10 -3 single pulse
0.02 0.01
-10 -3 -1 -10
-10
0
-10
1
-10
2
V
-10
3
10 -4 -7 10
10
-6
10
-5
10
-4
10
-3
10
-2
s
10
0
VDS
Page 4
tp
2002-07-17
Preliminary data
BSP 317 P
5 Typ. output characteristic ID = f (VDS ) parameter: Tj =25°C, -VGS
1.6
6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS ; Tj =25°C, -VGS
10
RDS(on)
-I D
10V A 5V 4.4V 3.6V 3.2V 1.2 2.8V 2.4V 1 2.2V
0.8
Ω
8 7 6 5 4 3
2.2V 2.4V 2.8V 3.2V 3.6V 4.4V 5V 10V
0.6
0.4 2 0.2 1 0 0
0 0
0.5
1
1.5
2
2.5
3
3.5
4
V
5
0.2
0.4
0.6
0.8
1
1.2
A
1.6
-VDS
-ID
7 Typ. transfer characteristics ID= f ( VGS ); |VDS|≥ 2 x |ID | x RDS(on)max parameter: Tj = 25 °C
1.6
8 Typ. forward transconductance gfs = f(ID) parameter: Tj =25°C
1.4
S
A
1.2 1.1 1.2 1
-I D
g fs
V
1
0.9 0.8
0.8
0.7 0.6
0.6
0.5 0.4
0.4 0.3 0.2 0.2 0.1 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.6 0 0 0.2 0.4 0.6 0.8 1 1.2
A
1.6
-VGS
Page 5
-ID
2002-07-17
Preliminary data
BSP 317 P
9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -0.43 A, VGS = -10 V
11
BSP 317 P
10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS
2.4
Ω
9
V
98%
2
RDS(on)
8 7 6
VGS(th)
1.8
typ.
1.6 1.4 1.2
2%
5 4 3 2 1 0 -60 -20 20
98%
1 0.8 typ 0.6 0.4 0.2 60 100
°C
180
0 -60
-20
20
60
100
°C
160
Tj
Tj
11.