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BSP317P Dataheets PDF



Part Number BSP317P
Manufacturers Infineon Technologies AG
Logo Infineon Technologies AG
Description SIPMOS Small-Signal-Transistor
Datasheet BSP317P DatasheetBSP317P Datasheet (PDF)

Preliminary data BSP 317 P SIPMOS Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS R DS(on) ID -250 4 -0.43 SOT-223 Drain pin 2/4 Gate pin1 Source pin 3 2 1 VPS05163 V Ω A 4 3 Type Package BSP 317 P SOT-223 Ordering Code Q67042-S4167 Tape and Reel Information - Marking BSP317P Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -0.43 -0.34 Unit A.

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Preliminary data BSP 317 P SIPMOS Small-Signal-Transistor Feature • P-Channel • Enhancement mode • Logic Level • dv/dt rated Product Summary VDS R DS(on) ID -250 4 -0.43 SOT-223 Drain pin 2/4 Gate pin1 Source pin 3 2 1 VPS05163 V Ω A 4 3 Type Package BSP 317 P SOT-223 Ordering Code Q67042-S4167 Tape and Reel Information - Marking BSP317P Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current TA=25°C TA=70°C Symbol ID Value -0.43 -0.34 Unit A Pulsed drain current TA=25°C ID puls dv/dt VGS Ptot Tj , Tstg -1.72 6 ±20 1.8 -55... +150 55/150/56 kV/µs V W °C Reverse diode dv/dt IS =-0.43A, VDS =-200V, di/dt=-200A/µs, Tjmax =150°C Gate source voltage Power dissipation TA=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-07-17 Preliminary data Thermal Characteristics Parameter Characteristics Symbol min. Values typ. BSP 317 P Unit max. Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) RthJS RthJA - 15 25 K/W - 80 48 115 70 Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250µA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -250 -1 Values typ. -1.5 max. -2 Unit V Gate threshold voltage, VGS = VDS ID =-370µA Zero gate voltage drain current VDS =-250V, VGS =0, Tj =25°C VDS =-250V, VGS =0, Tj =150°C µA -0.1 -10 -10 3.3 3 -0.2 -100 -100 5 4 nA Ω Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-4.5V, ID =-0.39A Drain-source on-state resistance VGS =-10V, ID =-0.43A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-07-17 Preliminary data BSP 317 P Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =-200V, ID=-0.43A, VGS =0 to -10V VDD =-200V, ID=-0.43A Symbol Conditions min. Values typ. 0.76 210 30 13.4 5.7 11.1 254 67 max. 262 37 16.7 8.5 16.6 381 100 Unit gfs Ciss Coss Crss td(on) tr td(off) tf |VDS|≥2*|ID |*RDS(on)max , ID =-0.34A VGS =0, VDS =-25V, f=1MHz 0.38 - S pF VDD =-30V, VGS=-10V, ID =-0.43A, RG =6Ω ns - -0.5 -4 -11.6 -2.8 -0.65 nC -5.2 -15.1 V V(plateau) VDD =-200V, ID=-0.43A Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr VGS =0, IF =-0.43A VR =-125V, IF =lS , diF /dt=100A/µs IS TA=25°C - -0.84 92 210 -0.43 A -1.72 -1.2 138 315 V ns nC Page 3 2002-07-17 Preliminary data BSP 317 P 1 Power dissipation Ptot = f (TA ) 1.9 BSP 317 P 2 Drain current ID = f (TA ) parameter: |VGS | ≥ 10V -0.5 BSP 317 P W 1.6 A -0.4 1.4 -0.35 Ptot ID 20 40 60 80 100 120 1.2 1 0.8 0.6 0.4 0.2 0 0 -0.3 -0.25 -0.2 -0.15 -0.1 -0.05 0 0 °C 160 20 40 60 80 100 120 °C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25°C -10 1 BSP 317 P 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 2 BSP 317 P K/W A tp = 140.0µs 10 1 -10 0 D Z thJA /I ID on ) = V DS 1 ms 10 0 -10 -1 DS ( 10 ms 10 -1 D = 0.50 0.20 10 -2 R 0.10 0.05 -10 -2 DC 10 -3 single pulse 0.02 0.01 -10 -3 -1 -10 -10 0 -10 1 -10 2 V -10 3 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Page 4 tp 2002-07-17 Preliminary data BSP 317 P 5 Typ. output characteristic ID = f (VDS ) parameter: Tj =25°C, -VGS 1.6 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: VGS ; Tj =25°C, -VGS 10 RDS(on) -I D 10V A 5V 4.4V 3.6V 3.2V 1.2 2.8V 2.4V 1 2.2V 0.8 Ω 8 7 6 5 4 3 2.2V 2.4V 2.8V 3.2V 3.6V 4.4V 5V 10V 0.6 0.4 2 0.2 1 0 0 0 0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0.2 0.4 0.6 0.8 1 1.2 A 1.6 -VDS -ID 7 Typ. transfer characteristics ID= f ( VGS ); |VDS|≥ 2 x |ID | x RDS(on)max parameter: Tj = 25 °C 1.6 8 Typ. forward transconductance gfs = f(ID) parameter: Tj =25°C 1.4 S A 1.2 1.1 1.2 1 -I D g fs V 1 0.9 0.8 0.8 0.7 0.6 0.6 0.5 0.4 0.4 0.3 0.2 0.2 0.1 0 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.6 0 0 0.2 0.4 0.6 0.8 1 1.2 A 1.6 -VGS Page 5 -ID 2002-07-17 Preliminary data BSP 317 P 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -0.43 A, VGS = -10 V 11 BSP 317 P 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 2.4 Ω 9 V 98% 2 RDS(on) 8 7 6 VGS(th) 1.8 typ. 1.6 1.4 1.2 2% 5 4 3 2 1 0 -60 -20 20 98% 1 0.8 typ 0.6 0.4 0.2 60 100 °C 180 0 -60 -20 20 60 100 °C 160 Tj Tj 11.


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