X28C010 Datasheet: 128K x 8-Bit Alterable E2PROM





X28C010 128K x 8-Bit Alterable E2PROM Datasheet

Part Number X28C010
Description 128K x 8-Bit Alterable E2PROM
Manufacture Xicor
Total Page 25 Pages
PDF Download Download X28C010 Datasheet PDF

Features: X28C010 1M X28C010 5 Volt, Byte Alterab le E2PROM 128K x 8 Bit FEATURES • A ccess Time: 120ns • Simple Byte and P age Write —Single 5V Supply —No Ext ernal High Voltages or VPP Control Circ uits —Self-Timed —No Erase Before W rite —No Complex Programming Algorith ms —No Overerase Problem • Low Powe r CMOS: —Active: 50mA —Standby: 500 µA • Software Data Protection —Pro tects Data Against System Level Inadver tant Writes • High Speed Page Write C apability • Highly Reliable Direct Wr ite™ Cell —Endurance: 100,000 Write Cycles —Data Retention: 100 Years Early End of Write Detection —DATA Polling —Toggle Bit Polling DESCRIPT ION The Xicor X28C010 is a 128K x 8 E2P ROM, fabricated with Xicor's proprietar y, high performance, floating gate CMOS technology. Like all Xicor programmabl e nonvolatile memories the X28C010 is a 5V only device. The X28C010 features t he JEDEC approved pinout for bytewide m emories, compatible with industry standard EPROMs. The X28C010 .

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X28C010
1M
X28C010
5 Volt, Byte Alterable E2PROM
128K x 8 Bit
FEATURES
Access Time: 120ns
Simple Byte and Page Write
—Single 5V Supply
—No External High Voltages or VPP Control Circuits
—Self-Timed
—No Erase Before Write
—No Complex Programming Algorithms
—No Overerase Problem
Low Power CMOS:
—Active: 50mA
—Standby: 500µA
Software Data Protection
—Protects Data Against System Level
Inadvertant Writes
High Speed Page Write Capability
Highly Reliable Direct Write™ Cell
—Endurance: 100,000 Write Cycles
—Data Retention: 100 Years
Early End of Write Detection
DATA Polling
—Toggle Bit Polling
DESCRIPTION
The Xicor X28C010 is a 128K x 8 E2PROM, fabricated
with Xicor's proprietary, high performance, floating gate
CMOS technology. Like all Xicor programmable non-
volatile memories the X28C010 is a 5V only device. The
X28C010 features the JEDEC approved pinout for byte-
wide memories, compatible with industry standard
EPROMs.
The X28C010 supports a 256-byte page write operation,
effectively providing a 19µs/byte write cycle and en-
abling the entire memory to be typically written in less
than 2.5 seconds. The X28C010 also features DATA
Polling and Toggle Bit Polling, system software support
schemes used to indicate the early completion of a write
cycle. In addition, the X28C010 supports Software Data
Protection option.
Xicor E2PROMs are designed and tested for applica-
tions requiring extended endurance. Data retention is
specified to be greater than 100 years.
PIN CONFIGURATIONS
CERDIP
FLAT PACK
SOIC (R)
NC
A16
A15
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
1 32
2 31
3 30
4 29
5 28
6 27
7 26
8 25
X28C010
9 24
10 23
11 22
12 21
13 20
14 19
15 18
16 17
VCC
WE
NC
A14
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
3858 FHD F02.1
PGA
I/O0 I/O2 I/O3 I/O5 I/O6
15 17 19 21 22
A1 A0 I/O1 VSS I/O4 I/O7 CE
13 14 16 18 20 23 24
A2 A3
12 11
A10 OE
25 26
A4
10
A6
8
A5
9
A7
7
X28C010
(BOTTOM VIEW)
A11 A9
27 28
A8 A13
29 30
A12 A15 NC VCC NC NC A14
6 5 2 36 34 32 31
A16 NC NC WE NC
4 3 1 35 33
3858 FHD F20
© Xicor, Inc. 1991, 1995, 1996 Patents Pending
3858-3.1 4/3/97 T1/C0/D0 SH
1
PLCC
LCC
30
A7
A6
5 4 3 2 32 31 29
6 1 28
A14
A13
A5 7
27 A8
A4
A3
8 26
9
X28C010
(TOP VIEW)
25
A9
A11
A2 10
24 OE
A1 11
23 A10
A0 12
22 CE
I/O0
13
14
15 16 17 18 19 20
21
I/O7
EXTENDED LCC
30
4 3 2 32 31
1
A7 5
29 A14
A6 6
28 A13
A5 7
27 A8
A4
A3
8 26
9
X28C010
(TOP VIEW)
25
A9
A11
A2 10
24 OE
A1 11
23 A10
A0 12
22 CE
I/O0 13
21 I/O7
14 15 16 17 18 19 20
A11
A9
A8
A13
A14
NC
NC
NC
WE
VCC
NC
NC
NC
A16
A15
A12
A7
A6
A5
A4
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
TSOP
3858 FHD F03.1
X28C010
40 OE
39 A10
38 CE
37 I/O7
36 I/O6
35 I/O5
34 I/O4
33 I/O3
32 NC
31 NC
30 VSS
29 NC
28 NC
27 I/O2
26 I/O1
25 I/O0
24 A0
23 A1
22 A2
21 A3
3858 ILL F21
Characteristics subject to change without notice

                    
                    






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