SIPMOS Small-Signal Transistor(N channel Enhancement mode Logic Level Avalanche rated)
BSP 318 S
SIPMOS ® Small-Signal Transistor
• N channel • Enhancement mode • Logic Level • Avalanche rated • VGS(th) = ...
BSP 318 S
SIPMOS ® Small-Signal
Transistor
N channel Enhancement mode Logic Level Avalanche rated VGS(th) = 1.2 ...2.0 V Pin 1 G Pin 2 D Pin 3 S Pin 4 D
Type
VDS 60 V
ID 2.6 A
RDS(on) 0.15 Ω
Package
Marking
Ordering Code
BSP 318 S
SOT-223
BSP 318 S
Q 67000-S127
Maximum Ratings Parameter Symbol Values Unit
Continuous drain current
TA = 25 °C TA = 100 °C
ID
A 2.6 1.7
DC drain current, pulsed
TA = 25 °C
IDpuls
10.4
E AS
Avalanche energy, single pulse
ID = 2.6 A, V DD = 25 V, RGS = 25 Ω L = 10 mH, Tj = 25 °C
mJ
60
E AR IAR
Avalanche energy, periodic limited by Tj(max) Avalanche current, repetitive,limited by Tj(max) Reverse diode dv /dt
IS = 2.6 A, VDS = 40 V, di/dt = 200 A/µs Tjmax = 150 °C
0.18 2.6 A KV/µs
dv /dt
6
V GS P tot
Gate source voltage Power dissipation
TA = 25 °C
± 14
1.8
V W
Semiconductor Group
1
29/01/1998
BSP 318 S
Maximum Ratings Parameter Symbol Values Unit
Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) Thermal resistance, junction-soldering point 1) IEC climatic category, DIN IEC 68-1
Tj Tstg RthJA RthJS
-55 ... + 150 -55 ... + 150
°C
≤ 70
17 55 / 150 / 56
K/W
1)
Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
*) MIL STD 883, Method 3015, Class 2
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Values typ. max. Unit
Drain- source breakdown voltage
V GS = 0...